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STMicroelectronics MOSFET, canale N, 0,308 Ω, 11 A, HV

STMicroelectronics MOSFET, canale N, 0,308 Ω, 11 A, HV, Tensione massima drain source: 600 V, Numero pin: 5, Tensione di soglia gate massima: 4.75V, Serie: M6, MPN: STL19N60M6

EUR 1.90

1

STMicroelectronics MOSFET canal N,, HV 11 A 600 V, 5 broches

STMicroelectronics MOSFET canal N,, HV 11 A 600 V, 5 broches, Résistance Drain Source maximum: 0,308 Ω, Tension de seuil maximale de la grille: 4.75V, Série: M6, MPN: STL19N60M6

EUR 1.90

1

STMicroelectronics Filtre EMI à protection ESD Flip-Chip, 11 broches

STMicroelectronics Filtre EMI à protection ESD Flip-Chip, 11 broches, Type de montage: CMS, Température de fonctionnement minimum: -40 °C, Dimensions: 1.44 x 1.94 x 0.65mm, Température d'utilisation maximum: +85 °C, Capacité: 3pF, Longueur: 1.44mm, MPN: EMIF02-USB03F2

EUR 0.29

1

STMicroelectronics MOSFET, STL19N60M6, N-Canal-Canal, 11 A, 600 V, 5-Pin, HV M6 Si

STMicroelectronics MOSFET, N-Canal-Canal, 11 A, 600 V, 5-Pin, HV M6 Si, Resistencia Máxima Drenador-Fuente: 0,308 Ω, Tensión de umbral de puerta máxima: 4.75V, MPN: STL19N60M6

EUR 1.90

1

STMicroelectronics Filtro EMI y protector ESD, EMIF02-USB03F2, Flip-Chip, 11-Pines

STMicroelectronics Filtro EMI y protector ESD, Flip-Chip, 11-Pines, Tipo de Montaje: Montaje superficial, Temperatura de Funcionamiento Mínima: -40 °C, Dimensiones: 1.44 x 1.94 x 0.65mm, Temperatura Máxima de Funcionamiento: +85 °C, Capacidad: 3pF, Longitud: 1.44mm, MPN: EMIF02-USB03F2

EUR 0.29

1

STMicroelectronics AEC-Q100 Driver gate MOSFET VND7040AJTR, 11 A, 28V, PowerSSO, 16-Pin

STMicroelectronics AEC-Q100 Driver gate MOSFET VND7040AJTR, 11 A, 28V, PowerSSO, 16-Pin, Topologia: Lato alto, Tipo di montaggio: Montaggio superficiale, Dimensioni: 4.9 x 3.9 x 1.6mm, Lunghezza: 4.9mm, Massima temperatura operativa: +150 °C, Minima temperatura operativa: -40 °C

EUR 1.41

1

STMicroelectronics AEC-Q100 Driver de MOSFET VN7040AJTR 11 A 28V, 16 broches, PowerSSO

STMicroelectronics AEC-Q100 Driver de MOSFET VN7040AJTR 11 A 28V, 16 broches, PowerSSO, Topologie: High Side, Type de montage: CMS, Dimensions: 4.9 x 3.9 x 1.6mm, Longueur: 4.9mm, Température d'utilisation maximum: +150 °C, Température de fonctionnement minimum: -40 °C

EUR 0.95

1

STMicroelectronics AEC-Q100 Driver de MOSFET VND7040AJTR 11 A 28V, 16 broches, PowerSSO

STMicroelectronics AEC-Q100 Driver de MOSFET VND7040AJTR 11 A 28V, 16 broches, PowerSSO, Topologie: High Side, Type de montage: CMS, Dimensions: 4.9 x 3.9 x 1.6mm, Longueur: 4.9mm, Température d'utilisation maximum: +150 °C, Température de fonctionnement minimum: -40 °C

EUR 1.41

1

STMicroelectronics AEC-Q100 Driver gate MOSFET VN7040AJTR, 11 A, 28V, PowerSSO, 16-Pin

STMicroelectronics AEC-Q100 Driver gate MOSFET VN7040AJTR, 11 A, 28V, PowerSSO, 16-Pin, Topologia: Lato alto, Tipo di montaggio: Montaggio superficiale, Dimensioni: 4.9 x 3.9 x 1.6mm, Lunghezza: 4.9mm, Massima temperatura operativa: +150 °C, Minima temperatura operativa: -40 °C

EUR 0.95

1

STMicroelectronics Controlador de motores DC, STSPIN250, 2.6A VFQFPN 3 x 3 x 1,0 - 16L 2.6A 11 V Motor dc Puente completo

STMicroelectronics Controlador de motores DC, 2.6A VFQFPN 3 x 3 x 1,0 - 16L 2.6A 11 V Motor dc Puente completo, MPN: STSPIN250

EUR 2.04

1

STMicroelectronics MOSFET, canale N, 360 mΩ, 11 A, DPAK, Montaggio superficiale

STMicroelectronics MOSFET, canale N, 360 mΩ, 11 A, DPAK, Montaggio superficiale, Modalità del canale: Enhancement, Tensione di soglia gate massima: 5V, Tensione di soglia gate minima: 3V, Dissipazione di potenza massima: 110 W, Configurazione transistor: Singolo, Tensione massima gate source: ±25 V, Lunghezza: 6.6mm, Massima temperatura operativa: +150 °C, MPN: STD13N60DM2

EUR 1.05

1

STMicroelectronics MOSFET canal N,, DPAK 11 A, 3 broches

STMicroelectronics MOSFET canal N,, DPAK 11 A, 3 broches, Type de montage: CMS, Résistance Drain Source maximum: 360 mΩ, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 5V, Tension de seuil minimale de la grille: 3V, Dissipation de puissance maximum: 110 W, Configuration du transistor: Simple, Tension Grille Source maximum: ±25 V, Longueur: 6.6mm, Température d'utilisation maximum: +150 °C, MPN: STD13N60DM2

EUR 1.94

3

STMicroelectronics MOSFET canal N,, DPAK 11 A, 3 broches

STMicroelectronics MOSFET canal N,, DPAK 11 A, 3 broches, Type de montage: CMS, Résistance Drain Source maximum: 360 mΩ, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 5V, Tension de seuil minimale de la grille: 3V, Dissipation de puissance maximum: 110 W, Configuration du transistor: Simple, Tension Grille Source maximum: ±25 V, Longueur: 6.6mm, Température d'utilisation maximum: +150 °C, MPN: STD13N60DM2

EUR 1.05

1

STMicroelectronics MOSFET canal N,, DPAK 11 A, 3 broches

STMicroelectronics MOSFET canal N,, DPAK 11 A, 3 broches, Type de montage: CMS, Résistance Drain Source maximum: 360 m Ω, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 5V, Tension de seuil minimale de la grille: 3V, Dissipation de puissance maximum: 110 W, Configuration du transistor: Simple, Tension Grille Source maximum: ±25 V, Tension directe de la diode: 1.6V, Hauteur: 2.17mm, MPN: STD13N60DM2

EUR 1.65

3

STMicroelectronics IGBT, STGF14NC60KD,, 11 A, 600 V, TO-220FP, 3 broches, Simple

STMicroelectronics IGBT,, 11 A, 600 V, TO-220FP, 3 broches, Simple, Tension Grille Emetteur maximum: ±20V, Dissipation de puissance maximum: 28 W, Type de montage: Traversant, Vitesse de découpage: 1MHz, Dimensions: 10.4 x 4.6 x 16.4mm, Température d'utilisation maximum: +150 °C, Température de fonctionnement minimum: -55 °C, MPN: STGF14NC60KD

EUR 1.45

1

STMicroelectronics IGBT, STGF14NC60KD,, 11 A, 600 V, TO-220FP, 3 broches, Simple

STMicroelectronics IGBT,, 11 A, 600 V, TO-220FP, 3 broches, Simple, Tension Grille Emetteur maximum: ±20V, Dissipation de puissance maximum: 28 W, Type de montage: Traversant, Vitesse de découpage: 1MHz, Longueur: 10.4mm, Largeur: 4.6mm, Hauteur: 16.4mm, Dimensions: 10.4 x 4.6 x 16.4mm, Température d'utilisation maximum: +150 °C, MPN: STGF14NC60KD

EUR 1.29

1

STMicroelectronics IGBT, STGF14NC60KD,, 11 A, 600 V, TO-220FP, 3 broches, Simple

STMicroelectronics IGBT,, 11 A, 600 V, TO-220FP, 3 broches, Simple, Tension Grille Emetteur maximum: ±20V, Dissipation de puissance maximum: 28 W, Type de montage: Traversant, Vitesse de découpage: 1MHz, Dimensions: 10.4 x 4.6 x 16.4mm, Température d'utilisation maximum: +150 °C, Température de fonctionnement minimum: -55 °C, MPN: STGF14NC60KD

EUR 1.52

1

STMicroelectronics AEC-Q100 Driver de puerta MOSFET VN7040AJTR, 11 A PowerSSO 16 pines

STMicroelectronics AEC-Q100 Driver de puerta MOSFET VN7040AJTR, 11 A PowerSSO 16 pines, Tensión de Alimentación: 28V, Topología: Lado alto, Tipo de Montaje: Montaje superficial, Dimensiones: 4.9 x 3.9 x 1.6mm, Longitud: 4.9mm, Temperatura Máxima de Funcionamiento: +150 °C, Temperatura de Funcionamiento Mínima: -40 °C

EUR 0.95

1

STMicroelectronics AEC-Q100 Driver de puerta MOSFET VND7040AJTR, 11 A PowerSSO 16 pines

STMicroelectronics AEC-Q100 Driver de puerta MOSFET VND7040AJTR, 11 A PowerSSO 16 pines, Tensión de Alimentación: 28V, Topología: Lado alto, Tipo de Montaje: Montaje superficial, Dimensiones: 4.9 x 3.9 x 1.6mm, Longitud: 4.9mm, Temperatura Máxima de Funcionamiento: +150 °C, Temperatura de Funcionamiento Mínima: -40 °C

EUR 1.41

1

STMicroelectronics MOSFET, canale N, 340 mΩ, 11 A, D2PAK, Montaggio superficiale

STMicroelectronics MOSFET, canale N, 340 mΩ, 11 A, D2PAK, Montaggio superficiale, Tensione massima drain source: 710 V, Modalità del canale: Enhancement, Tensione di soglia gate massima: 5V, Tensione di soglia gate minima: 3V, Dissipazione di potenza massima: 85 W, Configurazione transistor: Singolo, Tensione massima gate source: -25 V, +25 V, Lunghezza: 10.4mm, Massima temperatura operativa: +150 °C, MPN: STB15N65M5

EUR 0.91

1

STMicroelectronics MOSFET, canale N, 11 mΩ, 80 A, TO-220, Su foro

STMicroelectronics MOSFET, canale N, 11 mΩ, 80 A, TO-220, Su foro, Tensione massima drain source: 33 V, Modalità del canale: Enhancement, Tensione di soglia gate massima: 4V, Tensione di soglia gate minima: 2V, Dissipazione di potenza massima: 110 W, Configurazione transistor: Singolo, Lunghezza: 10.4mm, Massima temperatura operativa: +175 °C, MPN: STP75NS04Z

EUR 1.64

1

STMicroelectronics MOSFET, canale N, 11 mΩ, 80 A, TO-220, Su foro

STMicroelectronics MOSFET, canale N, 11 mΩ, 80 A, TO-220, Su foro, Tensione massima drain source: 33 V, Modalità del canale: Enhancement, Tensione di soglia gate massima: 4V, Tensione di soglia gate minima: 2V, Dissipazione di potenza massima: 110 W, Configurazione transistor: Singolo, Lunghezza: 10.4mm, Massima temperatura operativa: +175 °C, MPN: STP75NS04Z

EUR 1.93

1

STMicroelectronics Amplificatore audio Classe A-B, Single Ended, 11 Pin, alim. Duale, 14W, MULTIWATT V

STMicroelectronics Amplificatore audio Classe A-B, Single Ended, 11 Pin, alim. Duale, 14W, MULTIWATT V, Applicazione: Altoparlante, televisione, Tipo di montaggio: Su foro, Segnale in ingresso: Singolo, Dimensioni: 19.6 x 5 x 17.75mm, Massima temperatura operativa: +70 °C, MPN: TDA7269A

EUR 3.92

1

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Genre

Marchand

Prix (EUR)

STMicroelectronics MOSFET, canale N, 0,308 Ω, 11 A, HV

STMicroelectronics MOSFET canal N,, HV 11 A 600 V, 5 broches

STMicroelectronics Filtre EMI à protection ESD Flip-Chip, 11 broches

STMicroelectronics MOSFET, STL19N60M6, N-Canal-Canal, 11 A, 600 V, 5-Pin, HV M6 Si

STMicroelectronics Filtro EMI y protector ESD, EMIF02-USB03F2, Flip-Chip, 11-Pines

STMicroelectronics AEC-Q100 Driver gate MOSFET VND7040AJTR, 11 A, 28V, PowerSSO, 16-Pin

STMicroelectronics AEC-Q100 Driver de MOSFET VN7040AJTR 11 A 28V, 16 broches, PowerSSO

STMicroelectronics AEC-Q100 Driver de MOSFET VND7040AJTR 11 A 28V, 16 broches, PowerSSO

STMicroelectronics AEC-Q100 Driver gate MOSFET VN7040AJTR, 11 A, 28V, PowerSSO, 16-Pin

STMicroelectronics Controlador de motores DC, STSPIN250, 2.6A VFQFPN 3 x 3 x 1,0 - 16L 2.6A 11 V Motor dc Puente completo

STMicroelectronics MOSFET, canale N, 360 mΩ, 11 A, DPAK, Montaggio superficiale

STMicroelectronics MOSFET canal N,, DPAK 11 A, 3 broches

STMicroelectronics MOSFET canal N,, DPAK 11 A, 3 broches

STMicroelectronics MOSFET canal N,, DPAK 11 A, 3 broches

STMicroelectronics IGBT, STGF14NC60KD,, 11 A, 600 V, TO-220FP, 3 broches, Simple

STMicroelectronics IGBT, STGF14NC60KD,, 11 A, 600 V, TO-220FP, 3 broches, Simple

STMicroelectronics IGBT, STGF14NC60KD,, 11 A, 600 V, TO-220FP, 3 broches, Simple

STMicroelectronics AEC-Q100 Driver de puerta MOSFET VN7040AJTR, 11 A PowerSSO 16 pines

STMicroelectronics AEC-Q100 Driver de puerta MOSFET VND7040AJTR, 11 A PowerSSO 16 pines

STMicroelectronics MOSFET, canale N, 340 mΩ, 11 A, D2PAK, Montaggio superficiale

STMicroelectronics MOSFET, canale N, 11 mΩ, 80 A, TO-220, Su foro

STMicroelectronics MOSFET, canale N, 11 mΩ, 80 A, TO-220, Su foro

STMicroelectronics Amplificatore audio Classe A-B, Single Ended, 11 Pin, alim. Duale, 14W, MULTIWATT V

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