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STMicroelectronics Modulo MOSFET, canale N, 0,58 Ω, 12 A, HiP247

STMicroelectronics Modulo MOSFET, canale N, 0,58 Ω, 12 A, HiP247™, MPN: SCT10N120

EUR 10.00

1

STMicroelectronics Modulo di potenza SiC, canale N, 0,55 Ω, 12 A, HiP247

STMicroelectronics Modulo di potenza SiC, canale N, 0,55 Ω, 12 A, HiP247, MPN: SCTWA10N120

EUR 11.42

1

STMicroelectronics Modulo di potenza SiC, canale N, 0,52 Ω, 12 A, HiP247

STMicroelectronics Modulo di potenza SiC, canale N, 0,52 Ω, 12 A, HiP247, MPN: SCT10N120AG

EUR 13.14

1

STMicroelectronics Module MOSFET canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics Module MOSFET canal N,, Hip247 12 A 1200 V, 3 broches, MPN: SCT10N120

EUR 10.00

1

STMicroelectronics MOSFET, canale N, 0,69 Ω, 12 A, H2PAK-2, Montaggio superficiale

STMicroelectronics MOSFET, canale N, 0,69 Ω, 12 A, H2PAK-2, Montaggio superficiale, MPN: STH12N120K5-2

EUR 12.03

1

STMicroelectronics MOSFET canal N,, H2PAK-2 12 A 1200 V, 3 broches

STMicroelectronics MOSFET canal N,, H2PAK-2 12 A 1200 V, 3 broches, MPN: STH12N120K5-2

EUR 12.03

1

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches, MPN: SCT10N120AG

EUR 13.14

1

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches, MPN: SCTWA10N120

EUR 11.42

1

STMicroelectronics MOSFET, STH12N120K5-2, N-Canal-Canal, 12 A, 1.200 V, 3-Pin, H2PAK-2 STB37N60 SiC

STMicroelectronics MOSFET, N-Canal-Canal, 12 A, 1.200 V, 3-Pin, H2PAK-2 STB37N60 SiC, MPN: STH12N120K5-2

EUR 12.03

1

STMicroelectronics Modulo MOSFET, canale N, 0,58 Ω, 12 A, HiP247

STMicroelectronics Modulo MOSFET, canale N, 0,58 Ω, 12 A, HiP247™, Tensione massima drain source: 1200 V, Numero pin: 3, Modalità del canale: Depletion, Tensione di soglia gate massima: 3.5V, Materiale del transistor: SiC, Serie: SCT, MPN: SCT10N120

EUR 11.61

1

STMicroelectronics Modulo MOSFET, canale N, 0,58 Ω, 12 A, HiP247

STMicroelectronics Modulo MOSFET, canale N, 0,58 Ω, 12 A, HiP247™, Tensione massima drain source: 1200 V, Numero pin: 3, Modalità del canale: Depletion, Tensione di soglia gate massima: 3.5V, Materiale del transistor: SiC, Serie: SCT, MPN: SCT10N120

EUR 10.01

1

STMicroelectronics Módulo de potencia SiC, SCTWA10N120, N-Canal-Canal, 12 A, 1.200 V, 3-Pin, HiP247 SCTWA10N120 SiC

STMicroelectronics Módulo de potencia SiC, N-Canal-Canal, 12 A, 1.200 V, 3-Pin, HiP247 SCTWA10N120 SiC

EUR 11.42

1

STMicroelectronics Módulo MOSFET, SCT10N120, N-Canal-Canal, 12 A, 1.200 V, Reducción, 3-Pin, HiP247 SCT SiC

STMicroelectronics Módulo MOSFET, N-Canal-Canal, 12 A, 1.200 V, Reducción, 3-Pin, HiP247™ SCT SiC, MPN: SCT10N120

EUR 10.00

1

STMicroelectronics Modulo di potenza SiC, canale N, 0,55 Ω, 12 A, HiP247

STMicroelectronics Modulo di potenza SiC, canale N, 0,55 Ω, 12 A, HiP247, Tensione massima drain source: 1200 V, Numero pin: 3, Modalità del canale: Enhancement, Tensione di soglia gate massima: 3.5V, Serie: SCTWA10N120

EUR 11.65

1

STMicroelectronics Modulo di potenza SiC, canale N, 0,52 Ω, 12 A, HiP247

STMicroelectronics Modulo di potenza SiC, canale N, 0,52 Ω, 12 A, HiP247, Tensione massima drain source: 1200 V, Numero pin: 3, Modalità del canale: Depletion, Tensione di soglia gate massima: 25V, Serie: SCT, MPN: SCT10N120AG

EUR 13.40

1

STMicroelectronics Módulo de potencia SiC, SCT10N120AG, N-Canal-Canal, 12 A, 1.200 V, Reducción, 3-Pin, HiP247 SCT SiC

STMicroelectronics Módulo de potencia SiC, N-Canal-Canal, 12 A, 1.200 V, Reducción, 3-Pin, HiP247 SCT SiC, MPN: SCT10N120AG

EUR 13.14

1

STMicroelectronics Module MOSFET canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics Module MOSFET canal N,, Hip247 12 A 1200 V, 3 broches, Résistance Drain Source maximum: 0,58 Ω, Mode de canal: Depletion, Tension de seuil maximale de la grille: 3.5V, Matériau du transistor: SiC, Série: SCT, MPN: SCT10N120

EUR 10.01

1

STMicroelectronics Module MOSFET canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics Module MOSFET canal N,, Hip247 12 A 1200 V, 3 broches, Résistance Drain Source maximum: 0,58 Ω, Mode de canal: Depletion, Tension de seuil maximale de la grille: 3.5V, Matériau du transistor: SiC, Série: SCT, MPN: SCT10N120

EUR 11.61

1

STMicroelectronics MOSFET, canale N, 0,69 Ω, 12 A, H2PAK-2, Montaggio superficiale

STMicroelectronics MOSFET, canale N, 0,69 Ω, 12 A, H2PAK-2, Montaggio superficiale, Tensione massima drain source: 1200 V, Numero pin: 3, Modalità del canale: Enhancement, Tensione di soglia gate massima: 4.9V, Materiale del transistor: SiC, Serie: STB37N60, MPN: STH12N120K5-2

EUR 12.66

1

STMicroelectronics MOSFET canal N,, H2PAK-2 12 A 1200 V, 3 broches

STMicroelectronics MOSFET canal N,, H2PAK-2 12 A 1200 V, 3 broches, Type de montage: CMS, Résistance Drain Source maximum: 0,69 Ω, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 4.9V, Matériau du transistor: SiC, Série: STB37N60, MPN: STH12N120K5-2

EUR 12.66

1

STMicroelectronics Módulo MOSFET, SCT10N120, N-Canal-Canal, 12 A, 1.200 V, Reducción, 3-Pin, HiP247 SCT SiC

STMicroelectronics Módulo MOSFET, N-Canal-Canal, 12 A, 1.200 V, Reducción, 3-Pin, HiP247™ SCT SiC, Resistencia Máxima Drenador-Fuente: 0,58 Ω, Tensión de umbral de puerta máxima: 3.5V, MPN: SCT10N120

EUR 10.01

1

STMicroelectronics Módulo MOSFET, SCT10N120, N-Canal-Canal, 12 A, 1.200 V, Reducción, 3-Pin, HiP247 SCT SiC

STMicroelectronics Módulo MOSFET, N-Canal-Canal, 12 A, 1.200 V, Reducción, 3-Pin, HiP247™ SCT SiC, Resistencia Máxima Drenador-Fuente: 0,58 Ω, Tensión de umbral de puerta máxima: 3.5V, MPN: SCT10N120

EUR 11.61

1

STMicroelectronics Módulo de potencia SiC, SCTWA10N120, N-Canal-Canal, 12 A, 1.200 V, 3-Pin, HiP247 SCTWA10N120 SiC

STMicroelectronics Módulo de potencia SiC, N-Canal-Canal, 12 A, 1.200 V, 3-Pin, HiP247 SCTWA10N120 SiC, Resistencia Máxima Drenador-Fuente: 0,55 Ω, Modo de Canal: Mejora, Tensión de umbral de puerta máxima: 3.5V

EUR 11.65

1

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches, Résistance Drain Source maximum: 0,55 Ω, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 3.5V, Matériau du transistor: SiC, Série: SCTWA10N120

EUR 11.65

1

STMicroelectronics Módulo de potencia SiC, SCT10N120AG, N-Canal-Canal, 12 A, 1.200 V, Reducción, 3-Pin, HiP247 SCT SiC

STMicroelectronics Módulo de potencia SiC, N-Canal-Canal, 12 A, 1.200 V, Reducción, 3-Pin, HiP247 SCT SiC, Resistencia Máxima Drenador-Fuente: 0,52 Ω, Tensión de umbral de puerta máxima: 25V, MPN: SCT10N120AG

EUR 13.40

1

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Prix (EUR)

STMicroelectronics Modulo MOSFET, canale N, 0,58 Ω, 12 A, HiP247

STMicroelectronics Modulo di potenza SiC, canale N, 0,55 Ω, 12 A, HiP247

STMicroelectronics Modulo di potenza SiC, canale N, 0,52 Ω, 12 A, HiP247

STMicroelectronics Module MOSFET canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics MOSFET, canale N, 0,69 Ω, 12 A, H2PAK-2, Montaggio superficiale

STMicroelectronics MOSFET canal N,, H2PAK-2 12 A 1200 V, 3 broches

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics MOSFET, STH12N120K5-2, N-Canal-Canal, 12 A, 1.200 V, 3-Pin, H2PAK-2 STB37N60 SiC

STMicroelectronics Modulo MOSFET, canale N, 0,58 Ω, 12 A, HiP247

STMicroelectronics Modulo MOSFET, canale N, 0,58 Ω, 12 A, HiP247

STMicroelectronics Módulo de potencia SiC, SCTWA10N120, N-Canal-Canal, 12 A, 1.200 V, 3-Pin, HiP247 SCTWA10N120 SiC

STMicroelectronics Módulo MOSFET, SCT10N120, N-Canal-Canal, 12 A, 1.200 V, Reducción, 3-Pin, HiP247 SCT SiC

STMicroelectronics Modulo di potenza SiC, canale N, 0,55 Ω, 12 A, HiP247

STMicroelectronics Modulo di potenza SiC, canale N, 0,52 Ω, 12 A, HiP247

STMicroelectronics Módulo de potencia SiC, SCT10N120AG, N-Canal-Canal, 12 A, 1.200 V, Reducción, 3-Pin, HiP247 SCT SiC

STMicroelectronics Module MOSFET canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics Module MOSFET canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics MOSFET, canale N, 0,69 Ω, 12 A, H2PAK-2, Montaggio superficiale

STMicroelectronics MOSFET canal N,, H2PAK-2 12 A 1200 V, 3 broches

STMicroelectronics Módulo MOSFET, SCT10N120, N-Canal-Canal, 12 A, 1.200 V, Reducción, 3-Pin, HiP247 SCT SiC

STMicroelectronics Módulo MOSFET, SCT10N120, N-Canal-Canal, 12 A, 1.200 V, Reducción, 3-Pin, HiP247 SCT SiC

STMicroelectronics Módulo de potencia SiC, SCTWA10N120, N-Canal-Canal, 12 A, 1.200 V, 3-Pin, HiP247 SCTWA10N120 SiC

STMicroelectronics Module d'alimentation en carbure de silicium canal N,, Hip247 12 A 1200 V, 3 broches

STMicroelectronics Módulo de potencia SiC, SCT10N120AG, N-Canal-Canal, 12 A, 1.200 V, Reducción, 3-Pin, HiP247 SCT SiC

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