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STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4

GBP 5.45

1

STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4

STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 441 W, Transistor Configuration: Single

GBP 4.95

1

STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4

STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 441 W, Transistor Configuration: Single

GBP 6.33

1

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4

GBP 5.19

1

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4, Maximum Drain Source Resistance: 0.061 Ω, Maximum Gate Threshold Voltage: 4.75V

GBP 4.68

1

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4, Maximum Drain Source Resistance: 0.061 Ω, Maximum Gate Threshold Voltage: 4.75V

GBP 6.85

1

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG, Maximum Drain Source Resistance: 39 mΩ, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 7.53

1

STMicroelectronics VNQ860SP-E Multiplexer Quad:4 x 4 5.5 to 36 V, 10-Pin PowerSO

STMicroelectronics VNQ860SP-E Multiplexer Quad:4 x 4 5.5 to 36 V, 10-Pin PowerSO, Mounting Type: Surface Mount, Dimensions: 9.5 x 7.6 x 3.65mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Input Signal Type: Single Ended, Length: 9.5mm, Maximum Power Dissipation: 90 W

GBP 4.88

1

STMicroelectronics IGBT, 115 A 650 V, 4-Pin TO-247

STMicroelectronics IGBT, 115 A 650 V, 4-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 357 W, MPN: STGW75H65DFB2-4

GBP 4.85

1

STMicroelectronics, 4-Channel35W, 15-Pin MULTIWATT V E-TDA7375V

STMicroelectronics, 4-Channel35W, 15-Pin MULTIWATT V E-TDA7375V, Amplifier Type: Class-AB, Output Type: 2 Channel Stereo, 4 Channel Stereo, Application: Car Audio, Maximum Power: 35 W @ 4 Ω, Mounting Type: Through Hole, Typical Single Supply Voltage: 8 → 18 V, Input Signal Type: Single Ended, Dimensions: 19.6 x 5 x 17.75mm, Length: 19.6mm

GBP 5.01

1

STMicroelectronics, 4-Channel35W, 15-Pin MULTIWATT V E-TDA7375V

STMicroelectronics, 4-Channel35W, 15-Pin MULTIWATT V E-TDA7375V, Amplifier Type: Audio Power Amplifier, Output Type: 2 Channel Stereo, 4 Channel Stereo, Application: Automotive, Amplifier Class: Class A-B, Mounting Type: Through Hole, Typical Single Supply Voltage: 8 → 18 V, Input Signal Type: Single Ended, Dimensions: 19.6 x 5 x 17.75mm, Maximum Operating Temperature: +150 °C

GBP 4.54

1

STMicroelectronics, 4-Channel35W, 15-Pin MULTIWATT V E-TDA7375V

STMicroelectronics, 4-Channel35W, 15-Pin MULTIWATT V E-TDA7375V, Amplifier Type: Audio Power Amplifier, Output Type: 2 Channel Stereo, 4 Channel Stereo, Application: Automotive, Amplifier Class: Class A-B, Mounting Type: Through Hole, Typical Single Supply Voltage: 8 → 18 V, Input Signal Type: Single Ended, Dimensions: 19.6 x 5 x 17.75mm, Maximum Operating Temperature: +150 °C

GBP 5.33

1

STMicroelectronics M4T32-BR12SH1, Battery Backup IC 4-Pin, SNAPHAT

STMicroelectronics M4T32-BR12SH1, Battery Backup IC 4-Pin, SNAPHAT, Mounting Type: Through Hole, Dimensions: 21.84 x 14.99 x 6.99mm, Length: 21.84mm, Width: 14.99mm, Maximum Operating Temperature: +70 °C

GBP 6.06

1

STMicroelectronics M4T32-BR12SH1, Battery Backup IC 4-Pin, SNAPHAT

STMicroelectronics M4T32-BR12SH1, Battery Backup IC 4-Pin, SNAPHAT, Mounting Type: Through Hole, Dimensions: 21.84 x 14.99 x 6.99mm, Length: 21.84mm, Width: 14.99mm, Maximum Operating Temperature: +70 °C

GBP 6.45

1

STMicroelectronics M4T28-BR12SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT

STMicroelectronics M4T28-BR12SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT, Battery Type: Lithium-CF, Mounting Type: Through Hole, Dimensions: 21.84 x 14.99 x 7.75mm, Length: 21.84mm, Width: 14.99mm, Maximum Operating Temperature: +70 °C

GBP 5.60

1

STMicroelectronics M4T28-BR12SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT

STMicroelectronics M4T28-BR12SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT, Battery Type: Lithium-CF, Mounting Type: Through Hole, Dimensions: 21.84 x 14.99 x 7.75mm, Length: 21.84mm, Width: 14.99mm, Maximum Operating Temperature: +70 °C

GBP 5.95

1

STMicroelectronics M4Z32-BR00SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT

STMicroelectronics M4Z32-BR00SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT, Battery Type: Lithium-Ion, Mounting Type: Through Hole, Dimensions: 21.84 x 14.99 x 6.99mm, Length: 21.84mm, Width: 14.99mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C

GBP 8.30

1

STMicroelectronics M4Z28-BR00SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT

STMicroelectronics M4Z28-BR00SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT, Battery Type: Lithium-Ion, Mounting Type: Through Hole, Dimensions: 21.84 x 14.99 x 6.99mm, Length: 21.84mm, Width: 14.99mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C

GBP 4.84

1

STMicroelectronics M4Z28-BR00SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT

STMicroelectronics M4Z28-BR00SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT, Battery Type: Lithium-Ion, Mounting Type: Through Hole, Dimensions: 21.84 x 14.99 x 6.99mm, Length: 21.84mm, Width: 14.99mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C

GBP 5.35

1

STMicroelectronics M4Z28-BR00SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT

STMicroelectronics M4Z28-BR00SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT, Battery Type: Lithium-Ion, Mounting Type: Through Hole, Dimensions: 21.84 x 14.99 x 6.99mm, Length: 21.84mm, Width: 14.99mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C

GBP 5.20

1

STMicroelectronics M4Z32-BR00SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT

STMicroelectronics M4Z32-BR00SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT, Battery Type: Lithium-Ion, Mounting Type: Through Hole, Dimensions: 21.84 x 14.99 x 6.99mm, Length: 21.84mm, Width: 14.99mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C

GBP 7.51

1

STMicroelectronics M4T32-BR12SH6, Battery Backup IC, 3 V 4-Pin, SNAPHAT

STMicroelectronics M4T32-BR12SH6, Battery Backup IC, 3 V 4-Pin, SNAPHAT, Battery Type: Lithium-CF, Mounting Type: Through Hole, Dimensions: 21.84 x 18.03 x 8.51mm, Length: 21.84mm, Width: 18.03mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C

GBP 8.36

1

STMicroelectronics M4T32-BR12SH6, Battery Backup IC, 3 V 4-Pin, SNAPHAT

STMicroelectronics M4T32-BR12SH6, Battery Backup IC, 3 V 4-Pin, SNAPHAT, Battery Type: Lithium-CF, Mounting Type: Through Hole, Dimensions: 21.84 x 18.03 x 8.51mm, Length: 21.84mm, Width: 18.03mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C

GBP 8.02

1

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4, Maximum Drain Source Resistance: 0.036 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 7.68

1

STMicroelectronics N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-220 STP4N150

STMicroelectronics N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-220 STP4N150, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15.75mm

GBP 4.55

1

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STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4

STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4

STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

STMicroelectronics VNQ860SP-E Multiplexer Quad:4 x 4 5.5 to 36 V, 10-Pin PowerSO

STMicroelectronics IGBT, 115 A 650 V, 4-Pin TO-247

STMicroelectronics, 4-Channel35W, 15-Pin MULTIWATT V E-TDA7375V

STMicroelectronics, 4-Channel35W, 15-Pin MULTIWATT V E-TDA7375V

STMicroelectronics, 4-Channel35W, 15-Pin MULTIWATT V E-TDA7375V

STMicroelectronics M4T32-BR12SH1, Battery Backup IC 4-Pin, SNAPHAT

STMicroelectronics M4T32-BR12SH1, Battery Backup IC 4-Pin, SNAPHAT

STMicroelectronics M4T28-BR12SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT

STMicroelectronics M4T28-BR12SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT

STMicroelectronics M4Z32-BR00SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT

STMicroelectronics M4Z28-BR00SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT

STMicroelectronics M4Z28-BR00SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT

STMicroelectronics M4Z28-BR00SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT

STMicroelectronics M4Z32-BR00SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT

STMicroelectronics M4T32-BR12SH6, Battery Backup IC, 3 V 4-Pin, SNAPHAT

STMicroelectronics M4T32-BR12SH6, Battery Backup IC, 3 V 4-Pin, SNAPHAT

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4

STMicroelectronics N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-220 STP4N150

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