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STMicroelectronics L9822EPD013TR Multiplexer Octal -0.7 to 7 V, 20-Pin SOIC

STMicroelectronics L9822EPD013TR Multiplexer Octal -0.7 to 7 V, 20-Pin SOIC, Mounting Type: Surface Mount, Dimensions: 16 x 11.1 x 3.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Input Signal Type: Single Ended, Length: 16mm

GBP 6.18

1

STMicroelectronics L9822EPD013TR Multiplexer Octal -0.7 to 7 V, 20-Pin SOIC

STMicroelectronics L9822EPD013TR Multiplexer Octal -0.7 to 7 V, 20-Pin SOIC, Mounting Type: Surface Mount, Typical Single Supply Voltage: -0.7 → 7 V, Input Signal Type: Single Ended, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +150 °C, Dimensions: 16 x 11.1 x 3.3mm, Length: 16mm

GBP 5.80

1

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 6.27

1

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 6.10

1

STMicroelectronics STGWT60H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT60H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.64

1

STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.94

1

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.32

1

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 7.17

1

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.22

1

STMicroelectronics STGW30NC60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30NC60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 200 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.40

1

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.51

1

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.44

1

STMicroelectronics STGW60V60F IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW60V60F IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.20

1

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 20.15mm, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 6.40

1

STMicroelectronics STGWA40S120DF3 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGWA40S120DF3 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 468 W, Transistor Configuration: Single, Dimensions: 15.9 x 5.1 x 21.1mm, Energy Rating: 8.5mJ, Gate Capacitance: 2475pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.68

1

STMicroelectronics STGWA40S120DF3 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGWA40S120DF3 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 468 W, Transistor Configuration: Single, Dimensions: 15.9 x 5.1 x 21.1mm, Energy Rating: 8.5mJ, Gate Capacitance: 2475pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.42

1

STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 20.15mm, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.45

1

STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 24.45mm, Energy Rating: 1435mJ, Gate Capacitance: 2170pF, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 6.32

1

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 20.15mm, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.33

1

STMicroelectronics VNQ860SP-E Multiplexer Quad:4 x 4 5.5 to 36 V, 10-Pin PowerSO

STMicroelectronics VNQ860SP-E Multiplexer Quad:4 x 4 5.5 to 36 V, 10-Pin PowerSO, Mounting Type: Surface Mount, Dimensions: 9.5 x 7.6 x 3.65mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Input Signal Type: Single Ended, Length: 9.5mm, Maximum Power Dissipation: 90 W

GBP 4.88

1

STMicroelectronics STGW60V60F IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW60V60F IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 20.15mm, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C

GBP 4.39

1

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.8mm, Width: 5mm, Height: 20.1mm, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C

GBP 4.70

1

STMicroelectronics STM32F103T8U7, 32bit ARM Cortex M3 Microcontroller, STM32F, 72MHz, 64 kB Flash, 36-Pin VFQFPN

STMicroelectronics STM32F103T8U7, 32bit ARM Cortex M3 Microcontroller, STM32F, 72MHz, 64 kB Flash, 36-Pin VFQFPN, Mounting Type: Surface Mount, RAM Size: 20 kB, USB Channels: 1 x Device, Typical Operating Supply Voltage: 2 to 3.6 V, ADC Resolution: 12bit

GBP 4.53

1

STMicroelectronics STP21N90K5, MOSFET, TO-220

GBP 5.02

1

STMicroelectronics STP21N90K5, MOSFET, TO-220

GBP 4.75

1

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STMicroelectronics L9822EPD013TR Multiplexer Octal -0.7 to 7 V, 20-Pin SOIC

STMicroelectronics L9822EPD013TR Multiplexer Octal -0.7 to 7 V, 20-Pin SOIC

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGWT60H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGW30NC60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGW60V60F IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGWA40S120DF3 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGWA40S120DF3 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics VNQ860SP-E Multiplexer Quad:4 x 4 5.5 to 36 V, 10-Pin PowerSO

STMicroelectronics STGW60V60F IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STM32F103T8U7, 32bit ARM Cortex M3 Microcontroller, STM32F, 72MHz, 64 kB Flash, 36-Pin VFQFPN

STMicroelectronics STP21N90K5, MOSFET, TO-220

STMicroelectronics STP21N90K5, MOSFET, TO-220

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