STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole
STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 20.15mm, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C