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STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG

GBP 0.68

1

STMicroelectronics L6390D, MOSFET 2, 80 mA, 20V 16-Pin, SOIC

STMicroelectronics L6390D, MOSFET 2, 80 mA, 20V 16-Pin, SOIC, Logic Type: CMOS, TTL, Topology: Half Bridge, High and Low Sides Dependency: Synchronous, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Dimensions: 10 x 6.2 x 1.5mm

GBP 1.54

1

STMicroelectronics L6390D, MOSFET 2, 80 mA, 20V 16-Pin, SOIC

STMicroelectronics L6390D, MOSFET 2, 80 mA, 20V 16-Pin, SOIC, Logic Type: CMOS, TTL, Topology: Half Bridge, High and Low Sides Dependency: Synchronous, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Dimensions: 10 x 6.2 x 1.5mm

GBP 1.81

1

STMicroelectronics STM8L152M8T6, 8bit STM8 Microcontroller, STM8L, 16MHz, 64 kB Flash, 80-Pin LQFP

STMicroelectronics STM8L152M8T6, 8bit STM8 Microcontroller, STM8L, 16MHz, 64 kB Flash, 80-Pin LQFP, Mounting Type: Surface Mount, ADC Channels: 28, Typical Operating Supply Voltage: 3.6 V, ADC Resolution: 12bit

GBP 2.61

1

STMicroelectronics STGY40NC60VD IGBT, 80 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY40NC60VD IGBT, 80 A 600 V, 3-Pin Max247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 2.78

1

STMicroelectronics STGY40NC60VD IGBT, 80 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY40NC60VD IGBT, 80 A 600 V, 3-Pin Max247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 2.89

1

STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG

STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Number of Elements per Chip: 2

GBP 0.55

1

STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG

STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Number of Elements per Chip: 2

GBP 0.75

1

STMicroelectronics STGY40NC60VD IGBT, 80 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY40NC60VD IGBT, 80 A 600 V, 3-Pin Max247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 15.9mm, Width: 5.3mm, Height: 20.3mm, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 6.40

1

STMicroelectronics L6390D, MOSFET 2, 80 mA, 20V 16-Pin, SOIC

STMicroelectronics L6390D, MOSFET 2, 80 mA, 20V 16-Pin, SOIC, Minimum Operating Supply Voltage: 12.5 V, Maximum Operating Supply Voltage: 20 V, Topology: Half Bridge, Mounting Type: Surface Mount, Peak Output Current: 80mA, Polarity: Inverting, Non-Inverting, Input Logic Compatibility: CMOS, TTL, High and Low Sides Dependency: Synchronous, Dimensions: 10 x 6.2 x 1.5mm

GBP 1.55

1

STMicroelectronics MJD44H11T4 NPN Transistor, 8 A, 80 V, 3-Pin DPAK

STMicroelectronics MJD44H11T4 NPN Transistor, 8 A, 80 V, 3-Pin DPAK, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Power Dissipation: 20 W, Minimum DC Current Gain: 40, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Dimensions: 2.4 x 6.6 x 6.2mm, Height: 2.4mm, Length: 6.6mm

GBP 0.33

1

STMicroelectronics MJD45H11T4 PNP Transistor, 8 A, 80 V, 3-Pin DPAK

STMicroelectronics MJD45H11T4 PNP Transistor, 8 A, 80 V, 3-Pin DPAK, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Power Dissipation: 20 W, Minimum DC Current Gain: 40, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Dimensions: 2.4 x 6.6 x 6.2mm, Height: 2.4mm, Length: 6.6mm

GBP 0.48

1

STMicroelectronics STM8S208MBT6B, 8bit STM8 Microcontroller, STM8S, 24MHz, 128 kB Flash, 80-Pin LQFP

STMicroelectronics STM8S208MBT6B, 8bit STM8 Microcontroller, STM8S, 24MHz, 128 kB Flash, 80-Pin LQFP, Mounting Type: Surface Mount, RAM Size: 6 kB, Number of PWM Units: 1(5 x 16 bit), Typical Operating Supply Voltage: 5.5 V, ADC Resolution: 10bit

GBP 3.43

1

STMicroelectronics N-Channel MOSFET, 9 A, 80 V, 3-Pin M250 LET9045F

STMicroelectronics N-Channel MOSFET, 9 A, 80 V, 3-Pin M250 LET9045F, Mounting Type: Surface Mount, Channel Mode: Enhancement, Maximum Power Dissipation: 108 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -0.5 V, +15 V, Height: 3.94mm, Length: 9.91mm, Maximum Operating Temperature: +200 °C

GBP 54.26

1

STMicroelectronics N-Channel MOSFET, 9 A, 80 V, 3-Pin M250 LET9045F

STMicroelectronics N-Channel MOSFET, 9 A, 80 V, 3-Pin M250 LET9045F, Mounting Type: Surface Mount, Channel Mode: Enhancement, Maximum Power Dissipation: 108 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -0.5 V, +15 V, Height: 3.94mm, Length: 9.91mm, Maximum Operating Temperature: +200 °C

GBP 50.97

1

STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.20

1

STMicroelectronics STGW40H60DLFB IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW40H60DLFB IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 283 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 2.80

1

STMicroelectronics STGW60H60DLFB IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW60H60DLFB IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.07

1

STMicroelectronics STGW40H65DFB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW40H65DFB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 283 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 3.29

1

STMicroelectronics STM8L152M8T6, 8bit STM8 Microcontroller, STM8L, 16MHz, 64 kB Flash, 80-Pin LQFP

STMicroelectronics STM8L152M8T6, 8bit STM8 Microcontroller, STM8L, 16MHz, 64 kB Flash, 80-Pin LQFP, Mounting Type: Surface Mount, Number of PWM Units: 1 x 16 bit, Typical Operating Supply Voltage: 3.6 V, ADCs: 28 x 12 bit, Dimensions: 16.2 x 16.2 x 1.45mm

GBP 3.06

1

STMicroelectronics STGW60H60DLFB IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW60H60DLFB IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 3.47

1

STMicroelectronics STGW40H65FB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW40H65FB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 283 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 1.44

1

STMicroelectronics STGW40H65FB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW40H65FB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 283 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 1.47

1

STMicroelectronics STGWT60H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT60H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 3.25

1

STMicroelectronics STGWT40H65FB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT40H65FB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 283 W, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 2.72

1

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STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG

STMicroelectronics L6390D, MOSFET 2, 80 mA, 20V 16-Pin, SOIC

STMicroelectronics L6390D, MOSFET 2, 80 mA, 20V 16-Pin, SOIC

STMicroelectronics STM8L152M8T6, 8bit STM8 Microcontroller, STM8L, 16MHz, 64 kB Flash, 80-Pin LQFP

STMicroelectronics STGY40NC60VD IGBT, 80 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY40NC60VD IGBT, 80 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG

STMicroelectronics Dual N-Channel MOSFET, 95 A, 80 V, 8-Pin PowerFLAT STL105N8F7AG

STMicroelectronics STGY40NC60VD IGBT, 80 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics L6390D, MOSFET 2, 80 mA, 20V 16-Pin, SOIC

STMicroelectronics MJD44H11T4 NPN Transistor, 8 A, 80 V, 3-Pin DPAK

STMicroelectronics MJD45H11T4 PNP Transistor, 8 A, 80 V, 3-Pin DPAK

STMicroelectronics STM8S208MBT6B, 8bit STM8 Microcontroller, STM8S, 24MHz, 128 kB Flash, 80-Pin LQFP

STMicroelectronics N-Channel MOSFET, 9 A, 80 V, 3-Pin M250 LET9045F

STMicroelectronics N-Channel MOSFET, 9 A, 80 V, 3-Pin M250 LET9045F

STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW40H60DLFB IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW60H60DLFB IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW40H65DFB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STM8L152M8T6, 8bit STM8 Microcontroller, STM8L, 16MHz, 64 kB Flash, 80-Pin LQFP

STMicroelectronics STGW60H60DLFB IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW40H65FB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW40H65FB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGWT60H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT40H65FB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole

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