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IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole, Transistor Configuration: Single, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 7.50

1

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole, Transistor Configuration: Single, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 8.69

1

IXYS IXXK100N60C3H1 IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole

IXYS IXXK100N60C3H1 IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 695 W, Switching Speed: 20 to 60kHz, Transistor Configuration: Single, Dimensions: 20.29 x 5.31 x 26.59mm, Energy Rating: 600mJ, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 17.88

1

IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole

IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 625 W, Switching Speed: 5 to 30kHz, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Energy Rating: 5.2mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 7.23

1

IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole

IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 880 W, Switching Speed: 10 to 30kHz, Transistor Configuration: Single, Dimensions: 20.29 x 5.31 x 26.59mm, Energy Rating: 3mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 9.42

1

IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole

IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 625 W, Switching Speed: 5 to 30kHz, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Energy Rating: 5.2mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 7.00

1

IXYS IXXK100N60C3H1 IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole

IXYS IXXK100N60C3H1 IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 695 W, Switching Speed: 20 to 60kHz, Transistor Configuration: Single, Dimensions: 20.29 x 5.31 x 26.59mm, Energy Rating: 600mJ, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 15.74

1

IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole

IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 880 W, Switching Speed: 10 to 30kHz, Transistor Configuration: Single, Dimensions: 20.29 x 5.31 x 26.59mm, Energy Rating: 3mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 9.73

1

IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount

IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount, Transistor Configuration: Single, Dimensions: 16.05 x 14 x 5.1mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 6.41

1

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 12.09

1

IXYS IXGH24N170 IGBT, 50 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH24N170 IGBT, 50 A 1700 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 12.97

1

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.58

1

IXYS IXDH20N120D1 IGBT, 38 A 1200 V, 3-Pin TO-247AD, Through Hole

IXYS IXDH20N120D1 IGBT, 38 A 1200 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.49

1

IXYS IXGH16N170 IGBT, 32 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH16N170 IGBT, 32 A 1700 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 7.82

1

IXYS IXGH6N170 IGBT, 6 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH6N170 IGBT, 6 A 1700 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 7.83

1

IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 14.32

1

IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount

IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount, Transistor Configuration: Single, Length: 16.05mm, Width: 14mm, Height: 5.1mm, Dimensions: 16.05 x 14 x 5.1mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 7.43

1

IXYS IXGH16N170 IGBT, 32 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH16N170 IGBT, 32 A 1700 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 8.55

1

IXYS IXGH24N170 IGBT, 50 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH24N170 IGBT, 50 A 1700 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 14.71

1

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 165 W, Transistor Configuration: Single, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 3.44

1

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 13.72

1

IXYS IXDH20N120D1 IGBT, 38 A 1200 V, 3-Pin TO-247AD, Through Hole

IXYS IXDH20N120D1 IGBT, 38 A 1200 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.87

1

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 85 W, Transistor Configuration: Single, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 2.48

1

IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 325 W, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 8.39

1

IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 85 W, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 3.47

1

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IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXXK100N60C3H1 IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole

IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole

IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole

IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole

IXYS IXXK100N60C3H1 IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole

IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole

IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH24N170 IGBT, 50 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole

IXYS IXDH20N120D1 IGBT, 38 A 1200 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH16N170 IGBT, 32 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH6N170 IGBT, 6 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount

IXYS IXGH16N170 IGBT, 32 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH24N170 IGBT, 50 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXDH20N120D1 IGBT, 38 A 1200 V, 3-Pin TO-247AD, Through Hole

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole

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