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IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 625 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 9.52

1

IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 625 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 8.63

1

IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 625 W, Switching Speed: 50kHz, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C

GBP 8.75

1

IXYS MII75-12A3 Series IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount

IXYS MII75-12A3 Series IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Dimensions: 94 x 34 x 30mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 34mm

GBP 46.99

1

IXYS MII75-12A3 Series IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount

IXYS MII75-12A3 Series IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Dimensions: 94 x 34 x 30mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 34mm

GBP 46.99

1

IXYS MID75-12A3 Single IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount

IXYS MID75-12A3 Single IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Dimensions: 94 x 34 x 30mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 34mm

GBP 39.71

1

IXYS MID75-12A3 Single IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount

IXYS MID75-12A3 Single IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Dimensions: 94 x 34 x 30mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 34mm

GBP 39.71

1

IXYS MDI75-12A3 Single IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount

IXYS MDI75-12A3 Single IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Dimensions: 94 x 34 x 30mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 34mm

GBP 31.52

1

IXYS MDI75-12A3 Single IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount

IXYS MDI75-12A3 Single IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Dimensions: 94 x 34 x 30mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 34mm

GBP 43.00

1

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 180 W, Switching Speed: 20kHz, Transistor Configuration: Single, Dimensions: 10.66 x 4.83 x 16mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.92

1

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 180 W, Switching Speed: 20kHz, Transistor Configuration: Single, Dimensions: 10.66 x 4.83 x 16mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.61

1

IXYS N-Channel MOSFET, 90 A, 850 V, 3-Pin PLUS264 IXFB90N85X

IXYS N-Channel MOSFET, 90 A, 850 V, 3-Pin PLUS264 IXFB90N85X, Mounting Type: Through Hole, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 1.79 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.4V

GBP 21.32

1

IXYS N-Channel MOSFET, 90 A, 850 V, 3-Pin PLUS264 IXFB90N85X

IXYS N-Channel MOSFET, 90 A, 850 V, 3-Pin PLUS264 IXFB90N85X, Mounting Type: Through Hole, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 1.79 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.4V

GBP 27.70

1

IXYS N-Channel MOSFET, 90 A, 850 V, 4-Pin SOT227 IXFN90N85X

IXYS N-Channel MOSFET, 90 A, 850 V, 4-Pin SOT227 IXFN90N85X, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 1.2 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.4V

GBP 28.95

1

IXYS N-Channel MOSFET, 90 A, 850 V, 4-Pin SOT227 IXFN90N85X

IXYS N-Channel MOSFET, 90 A, 850 V, 4-Pin SOT227 IXFN90N85X, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 1.2 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.4V

GBP 29.72

1

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 180 W, Switching Speed: 20kHz, Transistor Configuration: Single, Length: 10.66mm, Width: 4.83mm, Height: 16mm, Dimensions: 10.66 x 4.83 x 16mm, Maximum Operating Temperature: +150 °C

GBP 4.03

1

IXYS N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227B IXFN110N60P3

IXYS N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227B IXFN110N60P3, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 56 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.5 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 20.10

1

IXYS N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227B IXFN110N60P3

IXYS N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227B IXFN110N60P3, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 56 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.5 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 19.81

1

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 2.49

1

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 2.66

1

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 1.91

1

IXYS 600V 2 x 60A, Dual Diode, 8-Pin DSEI2X61-06P

IXYS 600V 2 x 60A, Dual Diode, 8-Pin DSEI2X61-06P, Mounting Type: Through Hole, Rectifier Type: Fast Recovery, Maximum Forward Voltage Drop: 1.8V, Peak Non-Repetitive Forward Surge Current: 550A

GBP 15.62

1

IXYS 600V 2 x 60A, Dual Diode, 8-Pin DSEI2X61-06P

IXYS 600V 2 x 60A, Dual Diode, 8-Pin DSEI2X61-06P, Mounting Type: Through Hole, Rectifier Type: Fast Recovery, Maximum Forward Voltage Drop: 1.8V, Peak Non-Repetitive Forward Surge Current: 550A

GBP 13.77

1

IXYS 1200V 2 x 91A, Dual Diode, 12-Pin DSEI2X101-12P

IXYS 1200V 2 x 91A, Dual Diode, 12-Pin DSEI2X101-12P, Mounting Type: Through Hole, Diode Configuration: Isolated, Rectifier Type: Fast Recovery, Maximum Forward Voltage Drop: 1.87V, Peak Non-Repetitive Forward Surge Current: 900A

GBP 12.45

1

IXYS 1200V 2 x 91A, Dual Diode, 12-Pin DSEI2X101-12P

IXYS 1200V 2 x 91A, Dual Diode, 12-Pin DSEI2X101-12P, Mounting Type: Through Hole, Diode Configuration: Isolated, Rectifier Type: Fast Recovery, Maximum Forward Voltage Drop: 1.87V, Peak Non-Repetitive Forward Surge Current: 900A

GBP 12.23

1

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IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole

IXYS MII75-12A3 Series IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount

IXYS MII75-12A3 Series IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount

IXYS MID75-12A3 Single IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount

IXYS MID75-12A3 Single IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount

IXYS MDI75-12A3 Single IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount

IXYS MDI75-12A3 Single IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS N-Channel MOSFET, 90 A, 850 V, 3-Pin PLUS264 IXFB90N85X

IXYS N-Channel MOSFET, 90 A, 850 V, 3-Pin PLUS264 IXFB90N85X

IXYS N-Channel MOSFET, 90 A, 850 V, 4-Pin SOT227 IXFN90N85X

IXYS N-Channel MOSFET, 90 A, 850 V, 4-Pin SOT227 IXFN90N85X

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227B IXFN110N60P3

IXYS N-Channel MOSFET, 90 A, 600 V, 4-Pin SOT-227B IXFN110N60P3

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS 600V 2 x 60A, Dual Diode, 8-Pin DSEI2X61-06P

IXYS 600V 2 x 60A, Dual Diode, 8-Pin DSEI2X61-06P

IXYS 1200V 2 x 91A, Dual Diode, 12-Pin DSEI2X101-12P

IXYS 1200V 2 x 91A, Dual Diode, 12-Pin DSEI2X101-12P

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