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Infineon IGB50N65H5ATMA1 IGBT, 80 A 650 V, 3-Pin TO-263

GBP 2.11

1

Infineon N-Channel MOSFET, 77 A, 55 V TO-220 IPP77N06S212AKSA2

GBP 1.55

1

Infineon N-Channel MOSFET, 80 A, 55 V TO-220 IPP80N06S207AKSA4

GBP 2.17

1

Infineon N-Channel MOSFET, 80 A, 55 V TO-220 IPP80N06S2L07AKSA2

GBP 2.41

1

Infineon N-Channel MOSFET, 100 A, 200 V TO-247 IRF200P223

GBP 5.07

1

Infineon N-Channel MOSFET, 137 A, 100 V TO-220 IPP045N10N3GXKSA1

GBP 2.26

1

Infineon IGW75N65H5XKSA1 IGBT, 75 A 650 V, 3-Pin TO-247

GBP 3.64

1

Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247

GBP 6.46

1

Infineon IHW25N120E1XKSA1 IGBT, 25 A 1200 V, 3-Pin TO-247

GBP 2.63

1

Infineon IHW30N135R5XKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247

GBP 2.67

1

Infineon IHW30N160R5XKSA1 IGBT, 30 A 1600 V, 3-Pin TO-247

GBP 3.36

1

Infineon N-Channel MOSFET, 195 A, 409 A, 40 V, 3-Pin TO-220AB AUIRFB8409

Infineon N-Channel MOSFET, 195 A, 409 A, 40 V, 3-Pin TO-220AB AUIRFB8409, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.02mm

GBP 3.34

1

Infineon N-Channel MOSFET, 75 A, 86 A, 55 V, 3-Pin TO-220AB AUIRL3705Z

Infineon N-Channel MOSFET, 75 A, 86 A, 55 V, 3-Pin TO-220AB AUIRL3705Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 9.02mm

GBP 1.78

1

Infineon N-Channel MOSFET, 75 A, 110 A, 55 V, 3-Pin TO-220AB AUIRF3205

Infineon N-Channel MOSFET, 75 A, 110 A, 55 V, 3-Pin TO-220AB AUIRF3205, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.02mm

GBP 1.01

1

Infineon N-Channel MOSFET, 75 A, 86 A, 55 V, 3-Pin TO-220AB AUIRL3705Z

Infineon N-Channel MOSFET, 75 A, 86 A, 55 V, 3-Pin TO-220AB AUIRL3705Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 9.02mm

GBP 1.78

1

Infineon N-Channel MOSFET, 75 A, 110 A, 55 V, 3-Pin TO-220AB AUIRF3205

Infineon N-Channel MOSFET, 75 A, 110 A, 55 V, 3-Pin TO-220AB AUIRF3205, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.02mm

GBP 1.94

1

Infineon N-Channel MOSFET, 195 A, 409 A, 40 V, 3-Pin TO-220AB AUIRFB8409

Infineon N-Channel MOSFET, 195 A, 409 A, 40 V, 3-Pin TO-220AB AUIRFB8409, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.02mm

GBP 3.22

1

Infineon N-Channel MOSFET, 75 A, 110 A, 55 V, 3-Pin TO-220AB AUIRF3205

Infineon N-Channel MOSFET, 75 A, 110 A, 55 V, 3-Pin TO-220AB AUIRF3205, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.02mm

GBP 0.98

1

Infineon N-Channel MOSFET, 75 A, 86 A, 55 V, 3-Pin TO-220AB AUIRL3705Z

Infineon N-Channel MOSFET, 75 A, 86 A, 55 V, 3-Pin TO-220AB AUIRL3705Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 9.02mm

GBP 1.51

1

Infineon N-Channel MOSFET, 195 A, 409 A, 40 V, 3-Pin TO-220AB AUIRFB8409

Infineon N-Channel MOSFET, 195 A, 409 A, 40 V, 3-Pin TO-220AB AUIRFB8409, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.02mm

GBP 3.94

1