Infineon N-Channel MOSFET, 120 A, 120 V, 3-Pin TO-220 IPP041N12N3GXKSA1
Infineon N-Channel MOSFET, 120 A, 120 V, 3-Pin TO-220 IPP041N12N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, MPN: IPP041N12N3 G