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Infineon N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1

Infineon N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 825 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 360 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm

GBP 0.15

1

Infineon N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1

Infineon N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 825 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 360 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm

GBP 0.06

1

Infineon P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 IRLML5103TRPBF

Infineon P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 IRLML5103TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.02mm

GBP 0.41

1

Infineon P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 IRLML5103TRPBF

Infineon P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 IRLML5103TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.02mm

GBP 0.39

1

Infineon N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF

Infineon N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 250 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.02mm

GBP 0.38

1

Infineon P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 IRLML5103TRPBF

Infineon P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 IRLML5103TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.02mm

GBP 0.11

1

Infineon N-Channel MOSFET, 1.2 A, 20 V, 3-Pin SOT-23 IRLML2402TRPBF

Infineon N-Channel MOSFET, 1.2 A, 20 V, 3-Pin SOT-23 IRLML2402TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 250 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.7V, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1.02mm

GBP 0.44

1

Infineon N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF

Infineon N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 250 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.02mm

GBP 0.40

1

Infineon N-Channel MOSFET, 1.2 A, 20 V, 3-Pin SOT-23 IRLML2402TRPBF

Infineon N-Channel MOSFET, 1.2 A, 20 V, 3-Pin SOT-23 IRLML2402TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 250 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.7V, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1.02mm

GBP 0.42

1

Infineon N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF

Infineon N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 250 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.02mm

GBP 0.10

1

Infineon N-Channel MOSFET, 1.2 A, 20 V, 3-Pin SOT-23 IRLML2402TRPBF

Infineon N-Channel MOSFET, 1.2 A, 20 V, 3-Pin SOT-23 IRLML2402TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 250 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.7V, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1.02mm

GBP 0.09

1

Infineon P-Channel MOSFET, 780 mA, 20 V, 3-Pin SOT-23 IRLML6302TRPBF

Infineon P-Channel MOSFET, 780 mA, 20 V, 3-Pin SOT-23 IRLML6302TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Minimum Gate Threshold Voltage: 0.7V, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1.01mm

GBP 0.11

1

Infineon P-Channel MOSFET, 780 mA, 20 V, 3-Pin SOT-23 IRLML6302TRPBF

Infineon P-Channel MOSFET, 780 mA, 20 V, 3-Pin SOT-23 IRLML6302TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Minimum Gate Threshold Voltage: 0.7V, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1.01mm, MPN: IRLML6302PBF

GBP 0.24

1

Infineon P-Channel MOSFET, 780 mA, 20 V, 3-Pin SOT-23 IRLML6302TRPBF

Infineon P-Channel MOSFET, 780 mA, 20 V, 3-Pin SOT-23 IRLML6302TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Minimum Gate Threshold Voltage: 0.7V, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1.01mm, MPN: IRLML6302PBF

GBP 0.41

1

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Infineon N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1

Infineon N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1

Infineon P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 IRLML5103TRPBF

Infineon P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 IRLML5103TRPBF

Infineon N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF

Infineon P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 IRLML5103TRPBF

Infineon N-Channel MOSFET, 1.2 A, 20 V, 3-Pin SOT-23 IRLML2402TRPBF

Infineon N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF

Infineon N-Channel MOSFET, 1.2 A, 20 V, 3-Pin SOT-23 IRLML2402TRPBF

Infineon N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF

Infineon N-Channel MOSFET, 1.2 A, 20 V, 3-Pin SOT-23 IRLML2402TRPBF

Infineon P-Channel MOSFET, 780 mA, 20 V, 3-Pin SOT-23 IRLML6302TRPBF

Infineon P-Channel MOSFET, 780 mA, 20 V, 3-Pin SOT-23 IRLML6302TRPBF

Infineon P-Channel MOSFET, 780 mA, 20 V, 3-Pin SOT-23 IRLML6302TRPBF

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