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Infineon N-Channel MOSFET, 50 A, 120 V, 3-Pin PG-TO252-3-11 IPD50N12S3L15ATMA1

Infineon N-Channel MOSFET, 50 A, 120 V, 3-Pin PG-TO252-3-11 IPD50N12S3L15ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.015 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Series: OptiMOS-T

GBP 0.62

1

Infineon N-Channel MOSFET, 50 A, 120 V, 3-Pin PG-TO252-3-11 IPD50N12S3L15ATMA1

Infineon N-Channel MOSFET, 50 A, 120 V, 3-Pin PG-TO252-3-11 IPD50N12S3L15ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.015 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Series: OptiMOS-T

GBP 1.35

1

Infineon N-Channel MOSFET, 70 A, 120 V, 3-Pin PG-TO220-3-1 IPP70N12S311AKSA1

Infineon N-Channel MOSFET, 70 A, 120 V, 3-Pin PG-TO220-3-1 IPP70N12S311AKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.0116 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: OptiMOS-T

GBP 1.69

1

Infineon N-Channel MOSFET, 50 A, 120 V, 3-Pin PG-TO263-3-2 IPB50N12S3L15ATMA1

Infineon N-Channel MOSFET, 50 A, 120 V, 3-Pin PG-TO263-3-2 IPB50N12S3L15ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0154 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Series: OptiMOS-T

GBP 0.96

1

Infineon N-Channel MOSFET, 50 A, 120 V, 3-Pin PG-TO263-3-2 IPB50N12S3L15ATMA1

Infineon N-Channel MOSFET, 50 A, 120 V, 3-Pin PG-TO263-3-2 IPB50N12S3L15ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0154 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Series: OptiMOS-T

GBP 0.87

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Infineon N-Channel MOSFET, 70 A, 120 V, 3-Pin PG-TO220-3-1 IPP70N12S311AKSA1

Infineon N-Channel MOSFET, 70 A, 120 V, 3-Pin PG-TO220-3-1 IPP70N12S311AKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.0116 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: OptiMOS-T

GBP 1.61

1

Infineon N-Channel MOSFET, 70 A, 120 V, 3-Pin DPAK IPD70N12S311ATMA1

Infineon N-Channel MOSFET, 70 A, 120 V, 3-Pin DPAK IPD70N12S311ATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0111 Ω, Maximum Gate Threshold Voltage: 4V, Series: OptiMOS-T

GBP 0.96

1

Infineon N-Channel MOSFET, 70 A, 120 V, 3-Pin DPAK IPD70N12S311ATMA1

Infineon N-Channel MOSFET, 70 A, 120 V, 3-Pin DPAK IPD70N12S311ATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0111 Ω, Maximum Gate Threshold Voltage: 4V, Series: OptiMOS-T

GBP 1.44

1

Infineon N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1

Infineon N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.026 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Series: OptiMOS™-T

GBP 0.50

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Infineon N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1

Infineon N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.026 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Series: OptiMOS™-T

GBP 0.50

1

Infineon N-Channel MOSFET, 160 A, 40 V, 7-Pin PG-TO263-7-3 IPB160N04S203ATMA4

Infineon N-Channel MOSFET, 160 A, 40 V, 7-Pin PG-TO263-7-3 IPB160N04S203ATMA4, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0029 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: OptiMOS - T

GBP 2.99

1

Infineon N-Channel MOSFET, 160 A, 40 V, 7-Pin PG-TO263-7-3 IPB160N04S203ATMA4

Infineon N-Channel MOSFET, 160 A, 40 V, 7-Pin PG-TO263-7-3 IPB160N04S203ATMA4, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0029 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: OptiMOS - T

GBP 1.56

1