Infineon BGS12SN6E6327XTSA1 RF Switch, 6-Pin TSNP-6-2 Infineon BGS12SN6E6327XTSA1 RF Switch, 6-Pin TSNP-6-2 GBP 0.18 1
Infineon BGS12SN6E6327XTSA1 RF Switch, 6-Pin TSNP-6-2 Infineon BGS12SN6E6327XTSA1 RF Switch, 6-Pin TSNP-6-2, Mounting Type: Surface Mount GBP 0.21 1
Infineon BGS12P2L6E6327XTSA1 RF Switch Circuit, 6-Pin TSLP-6-4 Infineon BGS12P2L6E6327XTSA1 RF Switch Circuit, 6-Pin TSLP-6-4 GBP 0.14 1
Infineon 1EDN8511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2 Infineon 1EDN8511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2 GBP 0.47 1
Infineon 1EDN7512GXTMA1, 8 A, 4.2V 6-Pin, PG-WSON-6-1 Infineon 1EDN7512GXTMA1, 8 A, 4.2V 6-Pin, PG-WSON-6-1 GBP 0.47 1
Infineon MOSFET, 2.3 A, 30 V, 6-Pin TSOP-6 BSL308CH6327XTSA1 Infineon MOSFET, 2.3 A, 30 V, 6-Pin TSOP-6 BSL308CH6327XTSA1 GBP 0.43 1
Infineon 1EDN7511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2 Infineon 1EDN7511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2 GBP 0.47 1
Infineon BGS12P2L6E6327XTSA1 RF Switch Circuit, 6-Pin TSLP-6-4 Infineon BGS12P2L6E6327XTSA1 RF Switch Circuit, 6-Pin TSLP-6-4, Dimensions: 0.7 x 1.1 x0.31mm, Mounting Type: Surface Mount GBP 0.15 1
Infineon BGS12P2L6E6327XTSA1 RF Switch Circuit, 6-Pin TSLP-6-4 Infineon BGS12P2L6E6327XTSA1 RF Switch Circuit, 6-Pin TSLP-6-4, Dimensions: 0.7 x 1.1 x0.31mm, Mounting Type: Surface Mount GBP 0.11 1
Infineon 1EDN7512GXTMA1, 8 A, 4.2V 6-Pin, PG-WSON-6-1 Infineon 1EDN7512GXTMA1, 8 A, 4.2V 6-Pin, PG-WSON-6-1, Logic Type: CMOS, Fall Time: 4.5ns GBP 0.51 1
Infineon 1EDN8511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2 Infineon 1EDN8511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2, Logic Type: CMOS, Fall Time: 4.5ns GBP 0.32 1
Infineon 1EDN8511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2 Infineon 1EDN8511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2, Logic Type: CMOS, Fall Time: 4.5ns GBP 0.51 1
Infineon 1EDN7512GXTMA1, 8 A, 4.2V 6-Pin, PG-WSON-6-1 Infineon 1EDN7512GXTMA1, 8 A, 4.2V 6-Pin, PG-WSON-6-1, Logic Type: CMOS, Fall Time: 4.5ns GBP 0.32 1
Infineon 1EDN7511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2 Infineon 1EDN7511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2, Logic Type: CMOS, Fall Time: 4.5ns GBP 0.32 1
Infineon 1EDN7511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2 Infineon 1EDN7511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2, Logic Type: CMOS, Fall Time: 4.5ns GBP 0.51 1
Infineon 1ED44175N01BXTSA1 IGBT, 11.9 A 11.4 V, 6-Pin PG-SOT23-6-3 Infineon 1ED44175N01BXTSA1 IGBT, 11.9 A 11.4 V, 6-Pin PG-SOT23-6-3 GBP 0.51 1
Infineon MOSFET, 2.3 A, 30 V, 6-Pin TSOP-6 BSL308CH6327XTSA1 Infineon MOSFET, 2.3 A, 30 V, 6-Pin TSOP-6 BSL308CH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.057 Ω, Maximum Gate Threshold Voltage: 2V, Series: OptiMOS GBP 0.25 1
Infineon MOSFET, 2.3 A, 30 V, 6-Pin TSOP-6 BSL308CH6327XTSA1 Infineon MOSFET, 2.3 A, 30 V, 6-Pin TSOP-6 BSL308CH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.057 Ω, Maximum Gate Threshold Voltage: 2V, Series: OptiMOS GBP 0.47 1
Infineon BGA123N6E6327XTSA1, RF Amplifier Low Noise, 21.2 dB 1615 MHz, 6-Pin PG-TSNP-6 Infineon BGA123N6E6327XTSA1, RF Amplifier Low Noise, 21.2 dB 1615 MHz, 6-Pin PG-TSNP-6 GBP 0.25 1
Infineon BGA125N6E6327XTSA1, RF Amplifier Low Noise, 22.2 dB 1300 MHz, 6-Pin PG-TSNP-6 Infineon BGA125N6E6327XTSA1, RF Amplifier Low Noise, 22.2 dB 1300 MHz, 6-Pin PG-TSNP-6 GBP 0.25 1
Infineon BGA125N6E6327XTSA1, RF Amplifier Low Noise, 22.2 dB 1300 MHz, 6-Pin PG-TSNP-6 Infineon BGA125N6E6327XTSA1, RF Amplifier Low Noise, 22.2 dB 1300 MHz, 6-Pin PG-TSNP-6, Typical Noise Figure: 0.8dB GBP 0.20 1
Infineon BGA123N6E6327XTSA1, RF Amplifier Low Noise, 21.2 dB 1615 MHz, 6-Pin PG-TSNP-6 Infineon BGA123N6E6327XTSA1, RF Amplifier Low Noise, 21.2 dB 1615 MHz, 6-Pin PG-TSNP-6, Typical Noise Figure: 0.75dB GBP 0.28 1
Infineon BGA125N6E6327XTSA1, RF Amplifier Low Noise, 22.2 dB 1300 MHz, 6-Pin PG-TSNP-6 Infineon BGA125N6E6327XTSA1, RF Amplifier Low Noise, 22.2 dB 1300 MHz, 6-Pin PG-TSNP-6, Typical Noise Figure: 0.8dB GBP 0.28 1
Infineon BGA123N6E6327XTSA1, RF Amplifier Low Noise, 21.2 dB 1615 MHz, 6-Pin PG-TSNP-6 Infineon BGA123N6E6327XTSA1, RF Amplifier Low Noise, 21.2 dB 1615 MHz, 6-Pin PG-TSNP-6, Typical Noise Figure: 0.75dB GBP 0.20 1
Infineon 1ED44175N01BXTSA1 IGBT, 11.9 A 11.4 V, 6-Pin PG-SOT23-6-3 Infineon 1ED44175N01BXTSA1 IGBT, 11.9 A 11.4 V, 6-Pin PG-SOT23-6-3, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Common Emitter GBP 0.55 1