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Infineon FP15R12W1T4PBPSA1 IGBT Module, 15 A 1200 V EASY1B

Infineon FP15R12W1T4PBPSA1 IGBT Module, 15 A 1200 V EASY1B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 7

GBP 33.95

1

Infineon FP25R12W2T4PBPSA1 IGBT Module, 25 A 1200 V EASY2B

Infineon FP25R12W2T4PBPSA1 IGBT Module, 25 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 7

GBP 42.29

1

Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B

Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 7

GBP 89.51

1

Infineon FP25R12W2T4PBPSA1 IGBT Module, 25 A 1200 V EASY2B

Infineon FP25R12W2T4PBPSA1 IGBT Module, 25 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 7

GBP 39.45

1

Infineon FP15R12W1T4PBPSA1 IGBT Module, 15 A 1200 V EASY1B

Infineon FP15R12W1T4PBPSA1 IGBT Module, 15 A 1200 V EASY1B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 7

GBP 26.76

1

Infineon FP35R12W2T4PB11BPSA1 IGBT Module, 35 A 1200 V EASY2B

Infineon FP35R12W2T4PB11BPSA1 IGBT Module, 35 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 7

GBP 44.35

1

Infineon FP35R12W2T4PB11BPSA1 IGBT Module, 35 A 1200 V EASY2B

Infineon FP35R12W2T4PB11BPSA1 IGBT Module, 35 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 7

GBP 47.52

1

Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B

Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 7

GBP 82.99

1

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 6, Transistor Configuration: Six Pack

GBP 54.51

1

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 6, Transistor Configuration: Six Pack

GBP 60.77

1

Infineon Dual MOSFET, 5.1 A, 55 V SO-8 IRF7341GTRPBF

Infineon Dual MOSFET, 5.1 A, 55 V SO-8 IRF7341GTRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 65 mO, Maximum Gate Threshold Voltage: 1V, Number of Elements per Chip: 2

GBP 0.86

1

Infineon Dual MOSFET, 5.1 A, 55 V SO-8 IRF7341GTRPBF

Infineon Dual MOSFET, 5.1 A, 55 V SO-8 IRF7341GTRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 65 mO, Maximum Gate Threshold Voltage: 1V, Number of Elements per Chip: 2

GBP 1.69

1

Infineon AUIR08152STR, MOSFET 1, -10 A, 10 A, 25V 8-Pin, SOIC

Infineon AUIR08152STR, MOSFET 1, -10 A, 10 A, 25V 8-Pin, SOIC, Fall Time: 150ns, Topology: Buffer, Time Delay: 350ns, Polarity: Non-Inverting, Mounting Type: Surface Mount, Height: 1.5mm, Maximum Operating Temperature: +125 °C

GBP 1.51

1

Infineon AUIR08152STR, MOSFET 1, -10 A, 10 A, 25V 8-Pin, SOIC

Infineon AUIR08152STR, MOSFET 1, -10 A, 10 A, 25V 8-Pin, SOIC, Fall Time: 150ns, Topology: Buffer, Time Delay: 350ns, Polarity: Non-Inverting, Mounting Type: Surface Mount, Height: 1.5mm, Maximum Operating Temperature: +125 °C

GBP 1.54

1

Infineon 2EDN8524FXTMA1, MOSFET 2, -5 A, 5 A, 20V 8-Pin, DSO

Infineon 2EDN8524FXTMA1, MOSFET 2, -5 A, 5 A, 20V 8-Pin, DSO, Fall Time: 10ns, Topology: Galvanic Isolated, High and Low Sides Dependency: Independent, Time Delay: 23ns, Bridge Type: Synchronous, Polarity: Non-Inverting, Mounting Type: Surface Mount

GBP 0.54

1

Infineon IR2127STRPBF, MOSFET 1, 0.25 A, 0.5 A, 20V 8-Pin, SOIC

Infineon IR2127STRPBF, MOSFET 1, 0.25 A, 0.5 A, 20V 8-Pin, SOIC, Fall Time: 65ns, Rise Time: 130ns, Topology: High Side, Time Delay: 250ns, Polarity: Non-Inverting, Mounting Type: Surface Mount, Height: 1.5mm, Input Bias Current: 15µA

GBP 1.19

1

Infineon 2EDN8524FXTMA1, MOSFET 2, -5 A, 5 A, 20V 8-Pin, DSO

Infineon 2EDN8524FXTMA1, MOSFET 2, -5 A, 5 A, 20V 8-Pin, DSO, Fall Time: 10ns, Topology: Galvanic Isolated, High and Low Sides Dependency: Independent, Time Delay: 23ns, Bridge Type: Synchronous, Polarity: Non-Inverting, Mounting Type: Surface Mount

GBP 0.55

1

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF, Package Type: DPAK (TO-252), Mounting Type: SMD, Maximum Drain Source Resistance: 8.2 mO, Maximum Gate Threshold Voltage: 2.25V, Number of Elements per Chip: 1

GBP 0.67

1

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF, Package Type: DPAK (TO-252), Mounting Type: SMD, Maximum Drain Source Resistance: 8.2 mO, Maximum Gate Threshold Voltage: 2.25V, Number of Elements per Chip: 1

GBP 0.36

1

Infineon FS200R12PT4PBOSA1 IGBT Module, 200 A 1200 V, 20-Pin ECONO4

Infineon FS200R12PT4PBOSA1 IGBT Module, 200 A 1200 V, 20-Pin ECONO4, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 6, Transistor Configuration: Six Pack

GBP 224.71

1

Infineon FS200R12PT4PBOSA1 IGBT Module, 200 A 1200 V, 20-Pin ECONO4

Infineon FS200R12PT4PBOSA1 IGBT Module, 200 A 1200 V, 20-Pin ECONO4, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 6, Transistor Configuration: Six Pack

GBP 272.88

1

Infineon 1EDI20N12AFXUMA1, MOSFET 2, -3.5 A, 4 A, 17V 8-Pin, DSO

Infineon 1EDI20N12AFXUMA1, MOSFET 2, -3.5 A, 4 A, 17V 8-Pin, DSO, Logic Type: CMOS, Fall Time: 19ns, Rise Time: 20ns, Topology: Galvanic Isolated, High and Low Sides Dependency: Independent, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Height: 1.65mm

GBP 1.43

1

Infineon IR21531DPBF, MOSFET 2, 0.18 A, 0.26 A, 16.8V 8-Pin, PDIP

Infineon IR21531DPBF, MOSFET 2, 0.18 A, 0.26 A, 16.8V 8-Pin, PDIP, Logic Type: CMOS, Fall Time: 100ns, Rise Time: 150ns, Time Delay: 0.85µs, Bridge Type: Half Bridge, Polarity: Inverting, Non-Inverting, Mounting Type: Through Hole, Height: 4.94mm, Length: 10.92mm

GBP 1.22

1

Infineon IR2184STRPBF, MOSFET 2, 1.9 A, 2.3 A, 20V 8-Pin, SOIC

Infineon IR2184STRPBF, MOSFET 2, 1.9 A, 2.3 A, 20V 8-Pin, SOIC, Fall Time: 35ns, Rise Time: 60ns, High and Low Sides Dependency: Dependent, Time Delay: 900ns, Bridge Type: Half Bridge, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Height: 1.5mm

GBP 2.70

1

Infineon 1EDI20N12AFXUMA1, MOSFET 2, -3.5 A, 4 A, 17V 8-Pin, DSO

Infineon 1EDI20N12AFXUMA1, MOSFET 2, -3.5 A, 4 A, 17V 8-Pin, DSO, Logic Type: CMOS, Fall Time: 19ns, Rise Time: 20ns, Topology: Galvanic Isolated, High and Low Sides Dependency: Independent, Polarity: Inverting, Non-Inverting, Mounting Type: Surface Mount, Height: 1.65mm

GBP 0.67

1

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Infineon FP15R12W1T4PBPSA1 IGBT Module, 15 A 1200 V EASY1B

Infineon FP25R12W2T4PBPSA1 IGBT Module, 25 A 1200 V EASY2B

Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B

Infineon FP25R12W2T4PBPSA1 IGBT Module, 25 A 1200 V EASY2B

Infineon FP15R12W1T4PBPSA1 IGBT Module, 15 A 1200 V EASY1B

Infineon FP35R12W2T4PB11BPSA1 IGBT Module, 35 A 1200 V EASY2B

Infineon FP35R12W2T4PB11BPSA1 IGBT Module, 35 A 1200 V EASY2B

Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B

Infineon Dual MOSFET, 5.1 A, 55 V SO-8 IRF7341GTRPBF

Infineon Dual MOSFET, 5.1 A, 55 V SO-8 IRF7341GTRPBF

Infineon AUIR08152STR, MOSFET 1, -10 A, 10 A, 25V 8-Pin, SOIC

Infineon AUIR08152STR, MOSFET 1, -10 A, 10 A, 25V 8-Pin, SOIC

Infineon 2EDN8524FXTMA1, MOSFET 2, -5 A, 5 A, 20V 8-Pin, DSO

Infineon IR2127STRPBF, MOSFET 1, 0.25 A, 0.5 A, 20V 8-Pin, SOIC

Infineon 2EDN8524FXTMA1, MOSFET 2, -5 A, 5 A, 20V 8-Pin, DSO

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF

Infineon FS200R12PT4PBOSA1 IGBT Module, 200 A 1200 V, 20-Pin ECONO4

Infineon FS200R12PT4PBOSA1 IGBT Module, 200 A 1200 V, 20-Pin ECONO4

Infineon 1EDI20N12AFXUMA1, MOSFET 2, -3.5 A, 4 A, 17V 8-Pin, DSO

Infineon IR21531DPBF, MOSFET 2, 0.18 A, 0.26 A, 16.8V 8-Pin, PDIP

Infineon IR2184STRPBF, MOSFET 2, 1.9 A, 2.3 A, 20V 8-Pin, SOIC

Infineon 1EDI20N12AFXUMA1, MOSFET 2, -3.5 A, 4 A, 17V 8-Pin, DSO

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