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Nexperia BCM856DS,115 Dual PNP Transistor, 100 mA, 65 V, 6-Pin SOT-457 (SC-74)

Nexperia BCM856DS,115 Dual PNP Transistor, 100 mA, 65 V, 6-Pin SOT-457 (SC-74), Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Minimum DC Current Gain: 200, Transistor Configuration: Isolated, Maximum Collector Base Voltage: -80 V, Maximum Emitter Base Voltage: -5 V, Dimensions: 3.1 x 1.7 x 1.1mm, Length: 3.1mm

GBP 0.26

1

Nexperia BCM857DS,115 Dual PNP Transistor, 100 mA, 45 V, 6-Pin SOT-457 (SC-74)

Nexperia BCM857DS,115 Dual PNP Transistor, 100 mA, 45 V, 6-Pin SOT-457 (SC-74), Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Minimum DC Current Gain: 200, Transistor Configuration: Isolated, Maximum Collector Base Voltage: -50 V, Maximum Emitter Base Voltage: -5 V, Dimensions: 3.1 x 1.7 x 1.1mm, Length: 3.1mm

GBP 0.22

1

Nexperia N-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-883B PMZB290UNE,315

Nexperia N-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-883B PMZB290UNE,315, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.95V, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 2.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.36mm

GBP 0.07

1

Nexperia N-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-883B PMZB290UNE,315

Nexperia N-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-883B PMZB290UNE,315, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.95V, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 2.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.36mm

GBP 0.19

1

Nexperia N-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-883B PMZB290UNE,315

Nexperia N-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-883B PMZB290UNE,315, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.95V, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 2.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.36mm

GBP 0.06

1

Nexperia BC846DS Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-457 (SC-74)

Nexperia BC846DS Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-457 (SC-74), Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Minimum DC Current Gain: 200, Transistor Configuration: Isolated, Maximum Collector Base Voltage: 80 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 100 MHz, Dimensions: 3.1 x 1.7 x 1.1mm

GBP 0.16

1

Nexperia PHPT60406NYX NPN Transistor, 6 A, 40 V, 4 + Tab-Pin LFPAK56, SOT669

Nexperia PHPT60406NYX NPN Transistor, 6 A, 40 V, 4 + Tab-Pin LFPAK56, SOT669, Mounting Type: Surface Mount, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 7 V, Maximum Operating Frequency: 153 MHz, Dimensions: 5 x 4.1 x 1.05mm, Maximum Base Emitter Saturation Voltage: 1.2 V, Maximum Collector Emitter Saturation Voltage: 380 mV

GBP 0.05

1

Nexperia PHPT60406NYX NPN Transistor, 6 A, 40 V, 4 + Tab-Pin LFPAK56, SOT669

Nexperia PHPT60406NYX NPN Transistor, 6 A, 40 V, 4 + Tab-Pin LFPAK56, SOT669, Mounting Type: Surface Mount, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 7 V, Maximum Operating Frequency: 153 MHz, Dimensions: 5 x 4.1 x 1.05mm, Maximum Base Emitter Saturation Voltage: 1.2 V, Maximum Collector Emitter Saturation Voltage: 380 mV

GBP 0.06

1

Nexperia BCM856DS,115 Dual PNP Transistor, 100 mA, 65 V, 6-Pin SOT-457 (SC-74)

Nexperia BCM856DS,115 Dual PNP Transistor, 100 mA, 65 V, 6-Pin SOT-457 (SC-74), Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Transistor Configuration: Isolated, Maximum Collector Base Voltage: -80 V, Maximum Emitter Base Voltage: -5 V, Number of Elements per Chip: 2, Dimensions: 3.1 x 1.7 x 1.1mm, Maximum Collector Emitter Saturation Voltage: -400 mV, Maximum Operating Temperature: +150 °C

GBP 0.08

1

Nexperia BCM857DS,115 Dual PNP Transistor, 100 mA, 45 V, 6-Pin SOT-457 (SC-74)

Nexperia BCM857DS,115 Dual PNP Transistor, 100 mA, 45 V, 6-Pin SOT-457 (SC-74), Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Transistor Configuration: Isolated, Maximum Collector Base Voltage: -50 V, Maximum Emitter Base Voltage: -5 V, Number of Elements per Chip: 2, Dimensions: 3.1 x 1.7 x 1.1mm, Maximum Collector Emitter Saturation Voltage: -200 mV, Maximum Operating Temperature: +150 °C

GBP 0.26

1

Nexperia BCM857DS,115 Dual PNP Transistor, 100 mA, 45 V, 6-Pin SOT-457 (SC-74)

Nexperia BCM857DS,115 Dual PNP Transistor, 100 mA, 45 V, 6-Pin SOT-457 (SC-74), Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Transistor Configuration: Isolated, Maximum Collector Base Voltage: -50 V, Maximum Emitter Base Voltage: -5 V, Number of Elements per Chip: 2, Dimensions: 3.1 x 1.7 x 1.1mm, Maximum Collector Emitter Saturation Voltage: -200 mV, Maximum Operating Temperature: +150 °C

GBP 0.10

1

Nexperia BCM856DS,115 Dual PNP Transistor, 100 mA, 65 V, 6-Pin SOT-457 (SC-74)

Nexperia BCM856DS,115 Dual PNP Transistor, 100 mA, 65 V, 6-Pin SOT-457 (SC-74), Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Transistor Configuration: Isolated, Maximum Collector Base Voltage: -80 V, Maximum Emitter Base Voltage: -5 V, Number of Elements per Chip: 2, Dimensions: 3.1 x 1.7 x 1.1mm, Maximum Collector Emitter Saturation Voltage: -400 mV, Maximum Operating Temperature: +150 °C

GBP 0.26

1

Nexperia BC846DS Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-457 (SC-74)

Nexperia BC846DS Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-457 (SC-74), Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Transistor Configuration: Isolated, Maximum Collector Base Voltage: 80 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 100 MHz, Number of Elements per Chip: 2, Dimensions: 3.1 x 1.7 x 1.1mm, Maximum Base Emitter Saturation Voltage: 1000 mV, Maximum Collector Emitter Saturation Voltage: 300 mV

GBP 0.06

1

Nexperia BC846DS Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-457 (SC-74)

Nexperia BC846DS Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-457 (SC-74), Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Transistor Configuration: Isolated, Maximum Collector Base Voltage: 80 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 100 MHz, Number of Elements per Chip: 2, Dimensions: 3.1 x 1.7 x 1.1mm, Maximum Base Emitter Saturation Voltage: 1000 mV, Maximum Collector Emitter Saturation Voltage: 300 mV

GBP 0.16

1

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Nexperia BCM856DS,115 Dual PNP Transistor, 100 mA, 65 V, 6-Pin SOT-457 (SC-74)

Nexperia BCM857DS,115 Dual PNP Transistor, 100 mA, 45 V, 6-Pin SOT-457 (SC-74)

Nexperia N-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-883B PMZB290UNE,315

Nexperia N-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-883B PMZB290UNE,315

Nexperia N-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-883B PMZB290UNE,315

Nexperia BC846DS Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-457 (SC-74)

Nexperia PHPT60406NYX NPN Transistor, 6 A, 40 V, 4 + Tab-Pin LFPAK56, SOT669

Nexperia PHPT60406NYX NPN Transistor, 6 A, 40 V, 4 + Tab-Pin LFPAK56, SOT669

Nexperia BCM856DS,115 Dual PNP Transistor, 100 mA, 65 V, 6-Pin SOT-457 (SC-74)

Nexperia BCM857DS,115 Dual PNP Transistor, 100 mA, 45 V, 6-Pin SOT-457 (SC-74)

Nexperia BCM857DS,115 Dual PNP Transistor, 100 mA, 45 V, 6-Pin SOT-457 (SC-74)

Nexperia BCM856DS,115 Dual PNP Transistor, 100 mA, 65 V, 6-Pin SOT-457 (SC-74)

Nexperia BC846DS Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-457 (SC-74)

Nexperia BC846DS Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-457 (SC-74)

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