kvalitative metoder en grundbog 3 udgave from GBP 709 | See the cheapest prices and offers on css.lazzaweb.dk

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ROHM RGT40TS65DGC11, P-Channel IGBT, 40 A 650 V, 3+Tab-Pin TO-247N, Through Hole

ROHM RGT40TS65DGC11, P-Channel IGBT, 40 A 650 V, 3+Tab-Pin TO-247N, Through Hole, Maximum Gate Emitter Voltage: 30V, Maximum Power Dissipation: 144 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 9mm, Gate Capacitance: 1070pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 709.16

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ROHM RGT40TS65DGC11, P-Channel IGBT, 40 A 650 V, 3+Tab-Pin TO-247N, Through Hole

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