ROHM SiC N-Channel MOSFET, 93 A, 650 V, 3-Pin TO-247N SCT3022ALGC11
ROHM SiC N-Channel MOSFET, 93 A, 650 V, 3-Pin TO-247N SCT3022ALGC11, Mounting Type: Through Hole, Maximum Drain Source Resistance: 29 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.6V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 262 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 22 V, Height: 21mm