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STMicroelectronics 1200V 15A, Diode, 2-Pin D?PAK HV STPSC15H12G2Y-TR

GBP 5.73

1

STMicroelectronics 1200V 15A, Diode, 2-Pin D?PAK HV STPSC15H12G2-TR

GBP 4.98

1

STMicroelectronics 1200V 15A, Diode, 2-Pin D?PAK HV STPSC15H12G2Y-TR

STMicroelectronics 1200V 15A, Diode, 2-Pin D?PAK HV STPSC15H12G2Y-TR, Mounting Type: Surface Mount, Diode Configuration: Single

GBP 6.63

1

STMicroelectronics 1200V 15A, Diode, 2-Pin D?PAK HV STPSC15H12G2-TR

STMicroelectronics 1200V 15A, Diode, 2-Pin D?PAK HV STPSC15H12G2-TR, Mounting Type: Surface Mount, Diode Configuration: Single

GBP 5.78

1

STMicroelectronics 1200V 15A, Diode, 2-Pin D?PAK HV STPSC15H12G2-TR

STMicroelectronics 1200V 15A, Diode, 2-Pin D?PAK HV STPSC15H12G2-TR, Mounting Type: Surface Mount, Diode Configuration: Single

GBP 3.03

1

STMicroelectronics 1200V 15A, Diode, 2-Pin D?PAK HV STPSC15H12G2Y-TR

STMicroelectronics 1200V 15A, Diode, 2-Pin D?PAK HV STPSC15H12G2Y-TR, Mounting Type: Surface Mount, Diode Configuration: Single

GBP 3.48

1

STMicroelectronics 100V Rectifier & Schottky Diode, 2 + Tab-Pin D²PAK FERD60H100CGY-TR

STMicroelectronics 100V Rectifier & Schottky Diode, 2 + Tab-Pin D²PAK FERD60H100CGY-TR, Mounting Type: Surface Mount, Diode Configuration: Single

GBP 1.05

1

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7, Maximum Drain Source Resistance: 0.055 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.2V, Number of Elements per Chip: 1

GBP 7.60

1

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7, Maximum Drain Source Resistance: 0.055 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.2V, Number of Elements per Chip: 1

GBP 11.43

1

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7

GBP 12.90

1

STMicroelectronics MOSFET, 90 A, 1200 V, 7-Pin H?PAK-7 SCTH70N120G2V-7

GBP 23.11

1

STMicroelectronics SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D²PAK STB33N60DM6

GBP 2.92

1

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7

GBP 26.30

1

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7

GBP 10.74

1

STMicroelectronics MOSFET, 90 A, 1200 V, 7-Pin H?PAK-7 SCTH70N120G2V-7

STMicroelectronics MOSFET, 90 A, 1200 V, 7-Pin H?PAK-7 SCTH70N120G2V-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.21 O, Maximum Gate Threshold Voltage: 4.9V

GBP 21.80

1

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.105 O, Maximum Gate Threshold Voltage: 5V

GBP 8.21

1

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.105 O, Maximum Gate Threshold Voltage: 5V

GBP 14.63

1

STMicroelectronics MOSFET, 90 A, 1200 V, 7-Pin H?PAK-7 SCTH70N120G2V-7

STMicroelectronics MOSFET, 90 A, 1200 V, 7-Pin H?PAK-7 SCTH70N120G2V-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.21 O, Maximum Gate Threshold Voltage: 4.9V

GBP 26.23

1

STMicroelectronics SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D²PAK STB33N60DM6

STMicroelectronics SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D²PAK STB33N60DM6, Maximum Drain Source Resistance: 0.115 Ω, Maximum Gate Threshold Voltage: 4.75V

GBP 4.08

1

STMicroelectronics SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D²PAK STB33N60DM6

STMicroelectronics SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D²PAK STB33N60DM6, Maximum Drain Source Resistance: 0.115 Ω, Maximum Gate Threshold Voltage: 4.75V

GBP 2.16

1

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7, Maximum Drain Source Resistance: 0.024 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 27.98

1

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7, Maximum Drain Source Resistance: 0.024 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 18.06

1

STMicroelectronics, 2-Channel, 28-Pin SOIC TDA7439DS13TR

STMicroelectronics, 2-Channel, 28-Pin SOIC TDA7439DS13TR, Amplifier Type: Audio Power Amplifier, Output Type: CMOS, Mounting Type: Surface Mount, Typical Single Supply Voltage: 7 → 10.2 V, Dimensions: 18.1 x 7.6 x 2.35mm, Maximum Operating Temperature: +70 °C

GBP 2.28

1

STMicroelectronics, 2-Channel, 28-Pin SOIC TDA7439DS13TR

STMicroelectronics, 2-Channel, 28-Pin SOIC TDA7439DS13TR, Amplifier Type: Audio Power Amplifier, Output Type: CMOS, Mounting Type: Surface Mount, Typical Single Supply Voltage: 7 → 10.2 V, Dimensions: 18.1 x 7.6 x 2.35mm, Maximum Operating Temperature: +70 °C

GBP 1.12

1

STMicroelectronics, 2-Channel, 28-Pin SOIC TDA7439DS13TR

STMicroelectronics, 2-Channel, 28-Pin SOIC TDA7439DS13TR, Amplifier Type: Audio Power Amplifier, Output Type: CMOS, Mounting Type: Surface Mount, Typical Single Supply Voltage: 7 10.2 V, Dimensions: 18.1 x 7.6 x 2.35mm, Length: 18.1mm, Maximum Operating Temperature: +70 °C, Width: 7.6mm

GBP 2.14

1

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STMicroelectronics 1200V 15A, Diode, 2-Pin D?PAK HV STPSC15H12G2Y-TR

STMicroelectronics 1200V 15A, Diode, 2-Pin D?PAK HV STPSC15H12G2-TR

STMicroelectronics 1200V 15A, Diode, 2-Pin D?PAK HV STPSC15H12G2Y-TR

STMicroelectronics 1200V 15A, Diode, 2-Pin D?PAK HV STPSC15H12G2-TR

STMicroelectronics 1200V 15A, Diode, 2-Pin D?PAK HV STPSC15H12G2-TR

STMicroelectronics 1200V 15A, Diode, 2-Pin D?PAK HV STPSC15H12G2Y-TR

STMicroelectronics 100V Rectifier & Schottky Diode, 2 + Tab-Pin D²PAK FERD60H100CGY-TR

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7

STMicroelectronics MOSFET, 90 A, 1200 V, 7-Pin H?PAK-7 SCTH70N120G2V-7

STMicroelectronics SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D²PAK STB33N60DM6

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7

STMicroelectronics MOSFET, 90 A, 1200 V, 7-Pin H?PAK-7 SCTH70N120G2V-7

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7

STMicroelectronics MOSFET, 90 A, 1200 V, 7-Pin H?PAK-7 SCTH70N120G2V-7

STMicroelectronics SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D²PAK STB33N60DM6

STMicroelectronics SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D²PAK STB33N60DM6

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7

STMicroelectronics, 2-Channel, 28-Pin SOIC TDA7439DS13TR

STMicroelectronics, 2-Channel, 28-Pin SOIC TDA7439DS13TR

STMicroelectronics, 2-Channel, 28-Pin SOIC TDA7439DS13TR

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