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STMicroelectronics N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT 5x6 STL260N4LF7

GBP 1.08

1

STMicroelectronics HTS221TR, Temperature & Humidity Sensor -40 to +120 °C ± 0.5 °C, ± 3.5% Analogue, 6-Pin HLGA

STMicroelectronics HTS221TR, Temperature & Humidity Sensor -40 to +120 °C ± 0.5 °C, ± 3.5% Analogue, 6-Pin HLGA, Output Type: Digital, Accuracy: ± 0.5 (Temperature) °C, ± 3.5 (Humidity) %, Mounting Type: Surface Mount, Minimum Operating Temperature: -40 °C, Operating Temperature Range: -40 +120 °C, Minimum Operating Supply Voltage: 1.7 V, Maximum Operating Supply Voltage: 3.6 V, Length: 2mm, Height: 0.9mm

GBP 3.05

1

STMicroelectronics N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT 5x6 STL260N4LF7

STMicroelectronics N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT 5x6 STL260N4LF7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.11 O, Maximum Gate Threshold Voltage: 2.5V

GBP 1.28

1

STMicroelectronics N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT 5x6 STL260N4LF7

STMicroelectronics N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT 5x6 STL260N4LF7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.11 O, Maximum Gate Threshold Voltage: 2.5V

GBP 0.72

1

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 6.27

1

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.32

1

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 6.10

1

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 7.17

1

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.22

1

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.51

1

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 3.84

1

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.44

1

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.8mm, Width: 5mm, Height: 20.1mm, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C

GBP 4.05

1

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.8mm, Width: 5mm, Height: 20.1mm, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C

GBP 4.70

1

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 20.15mm, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 6.40

1

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 20.15mm, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.33

1

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12, Mounting Type: Through Hole, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.75mm, Length: 10.4mm

GBP 2.30

1

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12, Mounting Type: Through Hole, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.75mm, Length: 10.4mm

GBP 2.71

1

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12, Mounting Type: Through Hole, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.75mm, Length: 10.4mm

GBP 2.25

1

STMicroelectronics N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK STB120NF10T4

STMicroelectronics N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK STB120NF10T4, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 312 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.6mm

GBP 3.02

1

STMicroelectronics N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK STB160N75F3

STMicroelectronics N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK STB160N75F3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 330 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.6mm

GBP 2.51

1

STMicroelectronics N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK STB140NF75T4

STMicroelectronics N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK STB140NF75T4, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 310 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.6mm

GBP 2.25

1

STMicroelectronics N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK STB120NF10T4

STMicroelectronics N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK STB120NF10T4, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 312 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.6mm

GBP 2.73

1

STMicroelectronics N-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK STB100NF04T4

STMicroelectronics N-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK STB100NF04T4, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.6mm

GBP 2.17

1

STMicroelectronics N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK STB120NF10T4

STMicroelectronics N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK STB120NF10T4, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 312 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.6mm

GBP 1.58

1

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STMicroelectronics N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT 5x6 STL260N4LF7

STMicroelectronics HTS221TR, Temperature & Humidity Sensor -40 to +120 °C ± 0.5 °C, ± 3.5% Analogue, 6-Pin HLGA

STMicroelectronics N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT 5x6 STL260N4LF7

STMicroelectronics N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT 5x6 STL260N4LF7

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

STMicroelectronics N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK STB120NF10T4

STMicroelectronics N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK STB160N75F3

STMicroelectronics N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK STB140NF75T4

STMicroelectronics N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK STB120NF10T4

STMicroelectronics N-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK STB100NF04T4

STMicroelectronics N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK STB120NF10T4

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