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STMicroelectronics L78S18CV, 1 Linear Voltage, Voltage Regulator 2A 3-Pin, TO-220

STMicroelectronics L78S18CV, 1 Linear Voltage, Voltage Regulator 2A 3-Pin, TO-220, Output Voltage: 18 V, Line Regulation: 360 mV, Mounting Type: Through Hole, Polarity: Positive, Quiescent Current: 8mA, Output Type: Fixed, Dimensions: 10.4 x 4.6 x 9.15mm, Length: 10.4mm

GBP 0.71

1

STMicroelectronics L78S18CV, 1 Linear Voltage, Voltage Regulator 2A 3-Pin, TO-220

STMicroelectronics L78S18CV, 1 Linear Voltage, Voltage Regulator 2A 3-Pin, TO-220, Output Voltage: 18 V, Line Regulation: 360 mV, Mounting Type: Through Hole, Polarity: Positive, Quiescent Current: 8mA, Output Type: Fixed, Dimensions: 10.4 x 4.6 x 9.15mm, Length: 10.4mm

GBP 0.68

1

STMicroelectronics N-Channel MOSFET, 11 A, 3-Pin DPAK STD13N60DM2

STMicroelectronics N-Channel MOSFET, 11 A, 3-Pin DPAK STD13N60DM2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Forward Diode Voltage: 1.6V, Height: 2.17mm

GBP 0.68

1

STMicroelectronics N-Channel MOSFET, 11 A, 3-Pin DPAK STD13N60DM2

STMicroelectronics N-Channel MOSFET, 11 A, 3-Pin DPAK STD13N60DM2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Forward Diode Voltage: 1.6V, Height: 2.17mm

GBP 1.49

1

STMicroelectronics N-Channel MOSFET, 11 A, 3-Pin DPAK STD13N60DM2

STMicroelectronics N-Channel MOSFET, 11 A, 3-Pin DPAK STD13N60DM2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Forward Diode Voltage: 1.6V, Height: 2.17mm

GBP 1.75

1

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60N

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 90 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 15.75mm

GBP 2.88

1

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220FP STF13NM60N

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220FP STF13NM60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 16.4mm

GBP 2.62

1

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220FP STF13NM60N

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220FP STF13NM60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 16.4mm

GBP 2.61

1

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220FP STF13NM60N

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220FP STF13NM60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 16.4mm

GBP 3.08

1

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60N

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 90 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 15.75mm

GBP 3.38

1

STMicroelectronics ,Audio1.7W, 8-Pin DFN TS4962IQT

STMicroelectronics ,Audio1.7W, 8-Pin DFN TS4962IQT, Amplifier Type: Class-D, Output Type: Monolithic, Application: Air Craft, Automotive, Military, Mobile Phones, Notebook Computer, PDA, Maximum Power: 1.7 W @ 8 Ω, 2.8 W @ 4 Ω, Mounting Type: Surface Mount, Typical Single Supply Voltage: 2.4 → 5.5 V, Input Signal Type: Differential, Single Ended, Typical Gain Bandwidth Product: 360 (Max)kHz, Minimum CMRR: 57dB, Dimensions: 3.15 x 3.15 x 0.6mm

GBP 0.62

1

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STMicroelectronics L78S18CV, 1 Linear Voltage, Voltage Regulator 2A 3-Pin, TO-220

STMicroelectronics L78S18CV, 1 Linear Voltage, Voltage Regulator 2A 3-Pin, TO-220

STMicroelectronics N-Channel MOSFET, 11 A, 3-Pin DPAK STD13N60DM2

STMicroelectronics N-Channel MOSFET, 11 A, 3-Pin DPAK STD13N60DM2

STMicroelectronics N-Channel MOSFET, 11 A, 3-Pin DPAK STD13N60DM2

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60N

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220FP STF13NM60N

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220FP STF13NM60N

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220FP STF13NM60N

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60N

STMicroelectronics ,Audio1.7W, 8-Pin DFN TS4962IQT

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