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STMicroelectronics LD1086V33-DG, 1 Low Dropout Voltage, Voltage Regulator 1.5A 3-Pin, TO-220

STMicroelectronics LD1086V33-DG, 1 Low Dropout Voltage, Voltage Regulator 1.5A 3-Pin, TO-220

STMicroelectronics LD1086V33-DG, 1 Low Dropout Voltage, Voltage Regulator 1.5A 3-Pin, TO-220, Dropout Voltage at Maximum Current: 1.5 @ 1.5 AV, Output Voltage: 3.3 V, Output Type: Fixed, Mounting Type: Through Hole, Maximum Input Voltage: 30 V, Quiescent Current: 10mA, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +125 °C, Automotive Standard: AEC-Q100, Dimensions: 10.4 x 4.6 x 15.75mm, Enable: Yes

GBP 1.29
1

STMicroelectronics MOSFET, 3-Pin TO-220 STGP8NC60KD

STMicroelectronics MOSFET, 3-Pin TO-220 STGP8NC60KD

STMicroelectronics MOSFET, 3-Pin TO-220 STGP8NC60KD, Mounting Type: Through Hole, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Minimum Gate Threshold Voltage: 4.5V, Maximum Power Dissipation: 65 W, Transistor Configuration: Single, Number of Elements per Chip: 1, Forward Diode Voltage: 2.1V, Height: 15.75mm, Length: 10.4mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C, Typical Gate Charge @ Vgs: 19

GBP 0.72
1

STMicroelectronics MOSFET, 3-Pin TO-220 STGP8NC60KD

STMicroelectronics MOSFET, 3-Pin TO-220 STGP8NC60KD

STMicroelectronics MOSFET, 3-Pin TO-220 STGP8NC60KD, Mounting Type: Through Hole, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Minimum Gate Threshold Voltage: 4.5V, Maximum Power Dissipation: 65 W, Transistor Configuration: Single, Number of Elements per Chip: 1, Forward Diode Voltage: 2.1V, Height: 15.75mm, Length: 10.4mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C, Typical Gate Charge @ Vgs: 19 nC @ 10 V

GBP 0.91
1

STMicroelectronics MOSFET, 3-Pin TO-220 STGP8NC60KD

STMicroelectronics MOSFET, 3-Pin TO-220 STGP8NC60KD

STMicroelectronics MOSFET, 3-Pin TO-220 STGP8NC60KD, Mounting Type: Through Hole, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Minimum Gate Threshold Voltage: 4.5V, Maximum Power Dissipation: 65 W, Transistor Configuration: Single, Number of Elements per Chip: 1, Forward Diode Voltage: 2.1V, Height: 15.75mm, Length: 10.4mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C, Typical Gate Charge @ Vgs: 19 nC @ 10 V

GBP 0.96
1