STMicroelectronics SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V
STMicroelectronics SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V, Maximum Drain Source Resistance: 0.072 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.2V, Number of Elements per Chip: 1