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STMicroelectronics STGWA30HP65FB IGBT, 30 A 650 V, 3-Pin TO-247

GBP 2.19

1

STMicroelectronics VIPER317LDTR, High Voltage Switcher 2A, 4.5 to 30 V 16-Pin, SOP-16

STMicroelectronics VIPER317LDTR, High Voltage Switcher 2A, 4.5 to 30 V 16-Pin, SOP-16, Mounting Type: Surface Mount, Current Limit: 710mA, Dimensions: 9.9x6x1.27mm, Output Voltage Range: 4.5 to 30 V

GBP 1.20

1

STMicroelectronics VIPER317LDTR, High Voltage Switcher 2A, 4.5 to 30 V 16-Pin, SOP-16

STMicroelectronics VIPER317LDTR, High Voltage Switcher 2A, 4.5 to 30 V 16-Pin, SOP-16, Mounting Type: Surface Mount, Current Limit: 710mA, Dimensions: 9.9x6x1.27mm, Output Voltage Range: 4.5 to 30 V

GBP 0.59

1

STMicroelectronics STGWA30HP65FB IGBT, 30 A 650 V, 3-Pin TO-247

STMicroelectronics STGWA30HP65FB IGBT, 30 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 260 W, Number of Transistors: 1, Transistor Configuration: Common Emitter

GBP 2.58

1

STMicroelectronics STGWA30HP65FB IGBT, 30 A 650 V, 3-Pin TO-247

STMicroelectronics STGWA30HP65FB IGBT, 30 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 260 W, Number of Transistors: 1, Transistor Configuration: Common Emitter

GBP 1.95

1

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6

GBP 4.35

1

STMicroelectronics STGF15H60DF IGBT, 30 A 600 V, 3-Pin TO-220FP, Through Hole

STMicroelectronics STGF15H60DF IGBT, 30 A 600 V, 3-Pin TO-220FP, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 30 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 10.4 x 4.6 x 16.4mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 1.05

1

STMicroelectronics STGF15H60DF IGBT, 30 A 600 V, 3-Pin TO-220FP, Through Hole

STMicroelectronics STGF15H60DF IGBT, 30 A 600 V, 3-Pin TO-220FP, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 30 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 10.4 x 4.6 x 16.4mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 1.23

1

STMicroelectronics STGF15H60DF IGBT, 30 A 600 V, 3-Pin TO-220FP, Through Hole

STMicroelectronics STGF15H60DF IGBT, 30 A 600 V, 3-Pin TO-220FP, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 30 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 10.4mm, Width: 4.6mm, Height: 16.4mm, Dimensions: 10.4 x 4.6 x 16.4mm, Maximum Operating Temperature: +175 °C

GBP 1.10

1

STMicroelectronics 45V 15 A, 30 A, Dual Diode, 3-Pin TO-220AB FERD30M45CT

STMicroelectronics 45V 15 A, 30 A, Dual Diode, 3-Pin TO-220AB FERD30M45CT, Mounting Type: Through Hole, Rectifier Type: Schottky Rectifier, Maximum Forward Voltage Drop: 470mV, Peak Non-Repetitive Forward Surge Current: 250A

GBP 1.08

1

STMicroelectronics 45V 15 A, 30 A, Dual Diode, 3-Pin TO-220AB FERD30M45CT

STMicroelectronics 45V 15 A, 30 A, Dual Diode, 3-Pin TO-220AB FERD30M45CT, Mounting Type: Through Hole, Rectifier Type: Schottky Rectifier, Maximum Forward Voltage Drop: 470mV, Peak Non-Repetitive Forward Surge Current: 250A

GBP 1.08

1

STMicroelectronics 45V 15 A, 30 A, Dual Diode, 3-Pin I2PAK (TO-262) FERD30M45CR

STMicroelectronics 45V 15 A, 30 A, Dual Diode, 3-Pin I2PAK (TO-262) FERD30M45CR, Mounting Type: Through Hole, Rectifier Type: Schottky Rectifier, Maximum Forward Voltage Drop: 470mV, Peak Non-Repetitive Forward Surge Current: 250A

GBP 1.18

1

STMicroelectronics 45V 15 A, 30 A, Dual Diode, 3-Pin I2PAK (TO-262) FERD30M45CR

STMicroelectronics 45V 15 A, 30 A, Dual Diode, 3-Pin I2PAK (TO-262) FERD30M45CR, Mounting Type: Through Hole, Rectifier Type: Schottky Rectifier, Maximum Forward Voltage Drop: 470mV, Peak Non-Repetitive Forward Surge Current: 250A

GBP 1.18

1

STMicroelectronics BU941ZT Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin TO-220AB

STMicroelectronics BU941ZT Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin TO-220AB, Maximum DC Collector Current: 15 A, 30 (Peak) A, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Minimum DC Current Gain: 300, Transistor Configuration: Common Emitter, Maximum Emitter Base Voltage: 5 V, Dimensions: 10.4 x 4.6 x 15.75mm, Length: 10.4mm, Maximum Base Emitter Saturation Voltage: 2.5 V

GBP 3.02

1

STMicroelectronics STGW30V60F IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30V60F IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 260 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 2.51

1

STMicroelectronics STGW30V60F IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30V60F IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 260 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 2.13

1

STMicroelectronics STGW30V60DF IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30V60DF IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 258 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 2.58

1

STMicroelectronics STGW30V60DF IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30V60DF IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 258 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 3.01

1

STMicroelectronics STGW30V60F IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30V60F IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 260 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 20.15mm, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C

GBP 2.15

1

STMicroelectronics STGW30V60DF IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30V60DF IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 258 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 20.15mm, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C

GBP 2.72

1

STMicroelectronics STGP30V60F IGBT, 30 A 600 V, 3-Pin TO-220, Through Hole

STMicroelectronics STGP30V60F IGBT, 30 A 600 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 260 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 10.4mm, Width: 4.6mm, Height: 15.75mm, Dimensions: 10.4 x 4.6 x 15.75mm, Maximum Operating Temperature: +175 °C

GBP 0.83

1

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6, Maximum Drain Source Resistance: 0.085 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 4.36

1

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6, Maximum Drain Source Resistance: 0.085 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 5.13

1

STMicroelectronics STGB15H60DF IGBT, 30 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB15H60DF IGBT, 30 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 115 W, Transistor Configuration: Single, Dimensions: 10.4 x 9.35 x 4.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 0.64

1

STMicroelectronics STGB15H60DF IGBT, 30 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB15H60DF IGBT, 30 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 115 W, Transistor Configuration: Single, Dimensions: 10.4 x 9.35 x 4.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 0.63

1

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STMicroelectronics STGWA30HP65FB IGBT, 30 A 650 V, 3-Pin TO-247

STMicroelectronics VIPER317LDTR, High Voltage Switcher 2A, 4.5 to 30 V 16-Pin, SOP-16

STMicroelectronics VIPER317LDTR, High Voltage Switcher 2A, 4.5 to 30 V 16-Pin, SOP-16

STMicroelectronics STGWA30HP65FB IGBT, 30 A 650 V, 3-Pin TO-247

STMicroelectronics STGWA30HP65FB IGBT, 30 A 650 V, 3-Pin TO-247

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6

STMicroelectronics STGF15H60DF IGBT, 30 A 600 V, 3-Pin TO-220FP, Through Hole

STMicroelectronics STGF15H60DF IGBT, 30 A 600 V, 3-Pin TO-220FP, Through Hole

STMicroelectronics STGF15H60DF IGBT, 30 A 600 V, 3-Pin TO-220FP, Through Hole

STMicroelectronics 45V 15 A, 30 A, Dual Diode, 3-Pin TO-220AB FERD30M45CT

STMicroelectronics 45V 15 A, 30 A, Dual Diode, 3-Pin TO-220AB FERD30M45CT

STMicroelectronics 45V 15 A, 30 A, Dual Diode, 3-Pin I2PAK (TO-262) FERD30M45CR

STMicroelectronics 45V 15 A, 30 A, Dual Diode, 3-Pin I2PAK (TO-262) FERD30M45CR

STMicroelectronics BU941ZT Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin TO-220AB

STMicroelectronics STGW30V60F IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30V60F IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30V60DF IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30V60DF IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30V60F IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30V60DF IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGP30V60F IGBT, 30 A 600 V, 3-Pin TO-220, Through Hole

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6

STMicroelectronics STGB15H60DF IGBT, 30 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB15H60DF IGBT, 30 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

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