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STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60ND

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60ND

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60ND, Mounting Type: Through Hole, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 109 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 15.75mm

GBP 2.12

1

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60ND

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60ND

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60ND, Mounting Type: Through Hole, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 109 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 15.75mm

GBP 2.12

1

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60ND

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60ND

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60ND, Mounting Type: Through Hole, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 109 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 15.75mm

GBP 2.50

1

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin DPAK STD13NM60ND

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin DPAK STD13NM60ND

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin DPAK STD13NM60ND, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 109 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 2.4mm

GBP 0.51

1

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin DPAK STD13NM60ND

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin DPAK STD13NM60ND

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin DPAK STD13NM60ND, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 109 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 2.4mm

GBP 2.66

1

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin DPAK STD13NM60ND

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin DPAK STD13NM60ND

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin DPAK STD13NM60ND, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 109 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 2.4mm

GBP 0.50

1