STMicroelectronics N-Channel MOSFET, 200 A, 40 V, 6 + Tab-Pin H2PAK STH410N4F7-6AG
STMicroelectronics N-Channel MOSFET, 200 A, 40 V, 6 + Tab-Pin H2PAK STH410N4F7-6AG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 365 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V