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Taiwan Semiconductor TSB772CK C0G PNP Transistor, 3 A, -30 V, 3-Pin TO-126

Taiwan Semiconductor TSB772CK C0G PNP Transistor, 3 A, -30 V, 3-Pin TO-126

Taiwan Semiconductor TSB772CK C0G PNP Transistor, 3 A, -30 V, 3-Pin TO-126, Mounting Type: Through Hole, Maximum Power Dissipation: 10 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -50 V, Maximum Emitter Base Voltage: -5 V, Maximum Operating Frequency: 100 MHz, Dimensions: 7.5 x 2.55 x 10.85mm, Maximum Base Emitter Saturation Voltage: -2 V, Maximum Collector Emitter Saturation Voltage: -0.5 V

GBP 0.10
1

Taiwan Semiconductor N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G

Taiwan Semiconductor N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G

Taiwan Semiconductor N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G, Package Type: TO-251, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 94 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.5V

GBP 1.68
1

Taiwan Semiconductor N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G

Taiwan Semiconductor N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G

Taiwan Semiconductor N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G, Package Type: TO-251, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 94 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.5V

GBP 0.50
1

Taiwan Semiconductor N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G

Taiwan Semiconductor N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G

Taiwan Semiconductor N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G, Package Type: TO-251, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 94 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.5V

GBP 0.63
1