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Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 170 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.9 x 4.8 x 20mm, Maximum Operating Temperature: +150 °C

GBP 2.56

1

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 30 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 0.83

1

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 4.10

1

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 2.41

1

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 170 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.9 x 4.8 x 20mm, Maximum Operating Temperature: +150 °C

GBP 1.68

1

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 45 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 1.47

1

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 3.49

1

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 45 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 0.93

1

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 2.41

1

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 30 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 1.22

1

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 170 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.9mm, Width: 4.8mm, Height: 20mm, Dimensions: 15.9 x 4.8 x 20mm, Maximum Operating Temperature: +150 °C

GBP 2.43

1

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.5mm, Width: 4.5mm, Height: 20mm, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 3.49

1

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 45 W, Switching Speed: 100kHz, Transistor Configuration: Single, Length: 10mm, Width: 4.5mm, Height: 15mm, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 1.40

1

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 30 W, Switching Speed: 100kHz, Transistor Configuration: Single, Length: 10mm, Width: 4.5mm, Height: 15mm, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 1.04

1

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.5mm, Width: 4.5mm, Height: 20mm, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 2.60

1

Toshiba GT30J322(Q) IGBT, 30 A 600 V, 3-Pin TO-3PNIS, Through Hole

Toshiba GT30J322(Q) IGBT, 30 A 600 V, 3-Pin TO-3PNIS, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 21mm, Maximum Operating Temperature: +150 °C

GBP 3.00

1

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-3PN TK10J80E

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-3PN TK10J80E, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20mm, Length: 15.5mm

GBP 1.70

1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.80

1

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-3PN TK10J80E

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-3PN TK10J80E, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20mm, Length: 15.5mm

GBP 1.70

1

Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1

Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 2.76

1

Toshiba N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1

Toshiba N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 1.44

1

Toshiba N-Channel MOSFET, 157 A, 80 V, 3-Pin TO-220 TK72E08N1

Toshiba N-Channel MOSFET, 157 A, 80 V, 3-Pin TO-220 TK72E08N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 192 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.80

1

Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1

Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 2.91

1

Toshiba N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1

Toshiba N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 2.65

1

Toshiba N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1

Toshiba N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 12.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 72 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.49

1

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Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J322(Q) IGBT, 30 A 600 V, 3-Pin TO-3PNIS, Through Hole

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-3PN TK10J80E

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-3PN TK10J80E

Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1

Toshiba N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1

Toshiba N-Channel MOSFET, 157 A, 80 V, 3-Pin TO-220 TK72E08N1

Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1

Toshiba N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1

Toshiba N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1

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