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Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3, Maximum Drain Source Resistance: 0.193 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 2.63

1

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3, Maximum Drain Source Resistance: 0.125 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 4.18

1

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3, Maximum Drain Source Resistance: 0.193 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 2.78

1

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3, Maximum Drain Source Resistance: 0.125 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 3.55

1

Vishay 1.1 V to 5.5 V, 3 A, Slew Rate Controlle

Vishay 1.1 V to 5.5 V, 3 A, Slew Rate Controlle, MPN: SIP32409DNP-T1-GE4

GBP 0.35

1

Vishay 1.1 V to 5.5 V, 3 A, Slew Rate Controlle

Vishay 1.1 V to 5.5 V, 3 A, Slew Rate Controlle, MPN: SIP32409DNP-T1-GE4

GBP 0.33

1

Vishay 1.1 V to 5.5 V, 3 A, Slew Rate Controlle

Vishay 1.1 V to 5.5 V, 3 A, Slew Rate Controlle, MPN: SIP32409DNP-T1-GE4

GBP 0.17

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.39

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.39

1

Vishay N-Channel MOSFET, 15 A, 800 V, 3-Pin TO-220AB

Vishay N-Channel MOSFET, 15 A, 800 V, 3-Pin TO-220AB, MPN: SIHP17N80AE-GE3

GBP 2.00

1

Vishay N-Channel MOSFET, 13 A, 800 V, 3-Pin TO-247AC SIHG15N80AE

GBP 2.78

1

Vishay N-Channel MOSFET, 13 A, 800 V, 3-Pin TO-220AB SIHP15N80AE

GBP 2.20

1

Vishay 60V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-247AC PACKAGE

Vishay 60V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-247AC PACKAGE, MPN: IRFP064PBF

GBP 5.36

1

Vishay N-Channel MOSFET, 15 A, 800 V, 3-Pin TO-220AB

Vishay N-Channel MOSFET, 15 A, 800 V, 3-Pin TO-220AB, Maximum Drain Source Resistance: 0.25 Ω, Maximum Gate Threshold Voltage: 2 → 4V, MPN: SIHP17N80AE-GE3

GBP 2.34

1

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.40

1

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3

Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin Thin-Lead TO-220 FULLPAK SiHA690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.40

1