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Vishay 200Ω Rotary Potentiometer 10-Turns 1-Gang Bushing Mount, 536-1-1-201

Vishay 200Ω Rotary Potentiometer 10-Turns 1-Gang Bushing Mount, Power Rating: 2W, Electrical Taper: Linear, Element Material: Wirewound, Termination Style: Solder Lug, Shaft Length: 22.2mm, Shaft Diameter: 6.35 mm, Tolerance: ±5%, Actuator Type: Slotted Shaft, Series: 536, MPN: 536-1-1-201

GBP 12.12

1

Vishay 200Ω Rotary Potentiometer 10-Turns 1-Gang Bushing Mount, 534-1-1-201

Vishay 200Ω Rotary Potentiometer 10-Turns 1-Gang Bushing Mount, Power Rating: 2W, Electrical Taper: Linear, Element Material: Wirewound, Termination Style: Turret, Shaft Length: 20.6mm, Shaft Diameter: 6.35 mm, Tolerance: ±5%, Actuator Type: Slotted Shaft, Series: 534, MPN: 534-1-1-201

GBP 12.31

1

Vishay N-Channel MOSFET, 19 A, 600 V, 3-Pin DPAK SIHD186N60EF-GE3

Vishay N-Channel MOSFET, 19 A, 600 V, 3-Pin DPAK SIHD186N60EF-GE3, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 201 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.2V

GBP 1.44

1

Vishay N-Channel MOSFET, 19 A, 600 V, 3-Pin DPAK SIHD186N60EF-GE3

Vishay N-Channel MOSFET, 19 A, 600 V, 3-Pin DPAK SIHD186N60EF-GE3, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 201 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.2V

GBP 2.25

1

Vishay N-Channel MOSFET, 19 A, 600 V, 3-Pin DPAK SIHD186N60EF-GE3

Vishay N-Channel MOSFET, 19 A, 600 V, 3-Pin DPAK SIHD186N60EF-GE3, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 201 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.2V

GBP 2.72

1

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Vishay 200Ω Rotary Potentiometer 10-Turns 1-Gang Bushing Mount, 536-1-1-201

Vishay 200Ω Rotary Potentiometer 10-Turns 1-Gang Bushing Mount, 534-1-1-201

Vishay N-Channel MOSFET, 19 A, 600 V, 3-Pin DPAK SIHD186N60EF-GE3

Vishay N-Channel MOSFET, 19 A, 600 V, 3-Pin DPAK SIHD186N60EF-GE3

Vishay N-Channel MOSFET, 19 A, 600 V, 3-Pin DPAK SIHD186N60EF-GE3

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