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onsemi KSC2223YMTF NPN Transistor, 20 mA, 20 V, 3-Pin SOT-23

onsemi KSC2223YMTF NPN Transistor, 20 mA, 20 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 150 mW, Minimum DC Current Gain: 40, Transistor Configuration: Single, Maximum Collector Base Voltage: 30 V, Maximum Emitter Base Voltage: 4 V, Maximum Operating Frequency: 100 MHz, Dimensions: 2.9 x 1.3 x 0.97mm

GBP 0.04

1

onsemi KSC2223YMTF NPN Transistor, 20 mA, 20 V, 3-Pin SOT-23

onsemi KSC2223YMTF NPN Transistor, 20 mA, 20 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 30 V, Maximum Emitter Base Voltage: 4 V, Maximum Operating Frequency: 100 MHz, Dimensions: 2.9 x 1.3 x 0.97mm, Maximum Collector Emitter Saturation Voltage: 0.3 V, Maximum Operating Temperature: +150 °C

GBP 0.02

1

onsemi KSC2223YMTF NPN Transistor, 20 mA, 20 V, 3-Pin SOT-23

onsemi KSC2223YMTF NPN Transistor, 20 mA, 20 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 30 V, Maximum Emitter Base Voltage: 4 V, Maximum Operating Frequency: 100 MHz, Dimensions: 2.9 x 1.3 x 0.97mm, Maximum Collector Emitter Saturation Voltage: 0.3 V, Maximum Operating Temperature: +150 °C

GBP 0.02

1

onsemi Dual N-Channel MOSFET, 7.5 A, 20 V, 8-Pin SOIC FDS6911

onsemi Dual N-Channel MOSFET, 7.5 A, 20 V, 8-Pin SOIC FDS6911, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.6 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.575mm, Length: 4.9mm

GBP 1.00

1

onsemi Dual N-Channel MOSFET, 7.5 A, 20 V, 8-Pin SOIC FDS6911

onsemi Dual N-Channel MOSFET, 7.5 A, 20 V, 8-Pin SOIC FDS6911, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.6 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.575mm, Length: 4.9mm

GBP 0.39

1

onsemi Dual N-Channel MOSFET, 7.5 A, 20 V, 8-Pin SOIC FDS6911

onsemi Dual N-Channel MOSFET, 7.5 A, 20 V, 8-Pin SOIC FDS6911, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.6 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.575mm, Length: 4.9mm

GBP 0.39

1

onsemi P-Channel MOSFET, 20 A, 60 V, 8-Pin WDFN NTTFS5116PLTG

onsemi P-Channel MOSFET, 20 A, 60 V, 8-Pin WDFN NTTFS5116PLTG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 72 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.75mm, Length: 3.15mm, MPN: NTTFS5116PLTAG

GBP 0.63

1

onsemi P-Channel MOSFET, 20 A, 60 V, 8-Pin WDFN NTTFS5116PLTG

onsemi P-Channel MOSFET, 20 A, 60 V, 8-Pin WDFN NTTFS5116PLTG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 72 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.75mm, Length: 3.15mm, MPN: NTTFS5116PLTAG

GBP 0.66

1

onsemi P-Channel MOSFET, 20 A, 60 V, 8-Pin WDFN NTTFS5116PLTG

onsemi P-Channel MOSFET, 20 A, 60 V, 8-Pin WDFN NTTFS5116PLTG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 72 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.75mm, Length: 3.15mm, MPN: NTTFS5116PLTAG

GBP 0.32

1

onsemi N-Channel MOSFET, 20 A, 200 V, 8-Pin Power 56 FDMS2672

onsemi N-Channel MOSFET, 20 A, 200 V, 8-Pin Power 56 FDMS2672, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 156 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 78 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.75mm

GBP 1.59

1

onsemi N-Channel MOSFET, 20 A, 200 V, 8-Pin Power 56 FDMS2672

onsemi N-Channel MOSFET, 20 A, 200 V, 8-Pin Power 56 FDMS2672, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 156 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 78 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.75mm

GBP 0.84

1

onsemi N-Channel MOSFET, 20 A, 200 V, 8-Pin Power 56 FDMS2672

onsemi N-Channel MOSFET, 20 A, 200 V, 8-Pin Power 56 FDMS2672, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 156 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 78 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.75mm

GBP 1.87

1

onsemi N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK HUF75329D3ST

onsemi N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK HUF75329D3ST, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 26 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 128 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 7.49mm

GBP 0.52

1

onsemi N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK HUF75329D3ST

onsemi N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK HUF75329D3ST, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 26 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 128 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 7.49mm

GBP 0.42

1

onsemi N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK HUF75329D3ST

onsemi N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK HUF75329D3ST, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 26 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 128 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 7.49mm

GBP 0.70

1

onsemi MJF45H11G PNP Transistor, 20 A, 80 V, 3-Pin TO-220

onsemi MJF45H11G PNP Transistor, 20 A, 80 V, 3-Pin TO-220, Maximum DC Collector Current: 10 (Continuous) A, 20 (Peak) A, Mounting Type: Through Hole, Maximum Power Dissipation: 36 W, Minimum DC Current Gain: 40, Transistor Configuration: Isolated, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 20 MHz, Dimensions: 10.63 x 4.9 x 16.12mm, Length: 10.63mm

GBP 1.00

1

onsemi N-Channel MOSFET, 750 mA, 20 V, 3-Pin SOT-23 MGSF1N02LT1G

onsemi N-Channel MOSFET, 750 mA, 20 V, 3-Pin SOT-23 MGSF1N02LT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 130 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 400 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.01mm, Length: 3.04mm

GBP 0.35

1

onsemi P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 NTR1P02T1G

onsemi P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 NTR1P02T1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 180 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Maximum Power Dissipation: 400 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.94mm, Length: 2.9mm

GBP 0.07

1

onsemi P-Channel MOSFET, 400 mA, 20 V, 3-Pin SOT-23 NTR0202PLT1G

onsemi P-Channel MOSFET, 400 mA, 20 V, 3-Pin SOT-23 NTR0202PLT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 550 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Maximum Power Dissipation: 225 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.01mm, Length: 3.04mm

GBP 0.17

1

onsemi P-Channel MOSFET, 400 mA, 20 V, 3-Pin SOT-23 NTR0202PLT1G

onsemi P-Channel MOSFET, 400 mA, 20 V, 3-Pin SOT-23 NTR0202PLT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 550 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Maximum Power Dissipation: 225 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.01mm, Length: 3.04mm

GBP 0.30

1

onsemi N-Channel MOSFET, 20 A, 100 V, 3-Pin TO-220F FDPF3860T

onsemi N-Channel MOSFET, 20 A, 100 V, 3-Pin TO-220F FDPF3860T, Mounting Type: Through Hole, Maximum Drain Source Resistance: 38 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 33.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16.07mm, Length: 10.36mm

GBP 0.98

1

onsemi N-Channel MOSFET, 750 mA, 20 V, 3-Pin SOT-23 MGSF1N02LT1G

onsemi N-Channel MOSFET, 750 mA, 20 V, 3-Pin SOT-23 MGSF1N02LT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 130 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 400 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.01mm, Length: 3.04mm

GBP 0.18

1

onsemi N-Channel MOSFET, 20 A, 100 V, 3-Pin TO-220F FDPF3860T

onsemi N-Channel MOSFET, 20 A, 100 V, 3-Pin TO-220F FDPF3860T, Mounting Type: Through Hole, Maximum Drain Source Resistance: 38 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 33.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16.07mm, Length: 10.36mm

GBP 0.98

1

onsemi, QSD2030F Si Photodiode, 20 °, Through Hole

onsemi Si Photodiode, 20 °, Through Hole, Wavelength of Peak Sensitivity: 880nm, Minimum Wavelength Detected: 700nm, Maximum Wavelength Detected: 1100nm, Height: 8.77mm, Diameter: 6.1mm, MPN: QSD2030F

GBP 0.27

1

onsemi P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 NVR1P02G

onsemi P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 NVR1P02G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 180 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Maximum Power Dissipation: 400 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.01mm, Length: 3.04mm, MPN: NVR1P02T1G

GBP 0.28

1

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onsemi KSC2223YMTF NPN Transistor, 20 mA, 20 V, 3-Pin SOT-23

onsemi KSC2223YMTF NPN Transistor, 20 mA, 20 V, 3-Pin SOT-23

onsemi KSC2223YMTF NPN Transistor, 20 mA, 20 V, 3-Pin SOT-23

onsemi Dual N-Channel MOSFET, 7.5 A, 20 V, 8-Pin SOIC FDS6911

onsemi Dual N-Channel MOSFET, 7.5 A, 20 V, 8-Pin SOIC FDS6911

onsemi Dual N-Channel MOSFET, 7.5 A, 20 V, 8-Pin SOIC FDS6911

onsemi P-Channel MOSFET, 20 A, 60 V, 8-Pin WDFN NTTFS5116PLTG

onsemi P-Channel MOSFET, 20 A, 60 V, 8-Pin WDFN NTTFS5116PLTG

onsemi P-Channel MOSFET, 20 A, 60 V, 8-Pin WDFN NTTFS5116PLTG

onsemi N-Channel MOSFET, 20 A, 200 V, 8-Pin Power 56 FDMS2672

onsemi N-Channel MOSFET, 20 A, 200 V, 8-Pin Power 56 FDMS2672

onsemi N-Channel MOSFET, 20 A, 200 V, 8-Pin Power 56 FDMS2672

onsemi N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK HUF75329D3ST

onsemi N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK HUF75329D3ST

onsemi N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK HUF75329D3ST

onsemi MJF45H11G PNP Transistor, 20 A, 80 V, 3-Pin TO-220

onsemi N-Channel MOSFET, 750 mA, 20 V, 3-Pin SOT-23 MGSF1N02LT1G

onsemi P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 NTR1P02T1G

onsemi P-Channel MOSFET, 400 mA, 20 V, 3-Pin SOT-23 NTR0202PLT1G

onsemi P-Channel MOSFET, 400 mA, 20 V, 3-Pin SOT-23 NTR0202PLT1G

onsemi N-Channel MOSFET, 20 A, 100 V, 3-Pin TO-220F FDPF3860T

onsemi N-Channel MOSFET, 750 mA, 20 V, 3-Pin SOT-23 MGSF1N02LT1G

onsemi N-Channel MOSFET, 20 A, 100 V, 3-Pin TO-220F FDPF3860T

onsemi, QSD2030F Si Photodiode, 20 °, Through Hole

onsemi P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 NVR1P02G

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