hakomi mindfulness-centered somatic psychotherapy: a comprehensive guide to theory and practice from GBP 5 | See the cheapest prices and offers on css.lazzaweb.dk

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247

GBP 7.07

1

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

GBP 6.09

1

onsemi AFGHL75T65SQDC IGBT, 75 A 650 V, 3-Pin TO-247

GBP 4.88

1

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 714 W, Transistor Configuration: Single

GBP 8.21

1

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 714 W, Transistor Configuration: Single

GBP 6.80

1

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 660 W, Transistor Configuration: Single

GBP 6.09

1

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 660 W, Transistor Configuration: Single

GBP 7.07

1

onsemi AFGHL75T65SQDC IGBT, 75 A 650 V, 3-Pin TO-247

onsemi AFGHL75T65SQDC IGBT, 75 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Number of Transistors: 1, Transistor Configuration: Single

GBP 5.68

1

onsemi AFGHL75T65SQDC IGBT, 75 A 650 V, 3-Pin TO-247

onsemi AFGHL75T65SQDC IGBT, 75 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Number of Transistors: 1, Transistor Configuration: Single

GBP 4.90

1

onsemi N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 NTHL065N65S3HF

GBP 5.00

1

onsemi N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247 NTH4LN019N65S3H

GBP 6.81

1

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL082N65S3HF

GBP 4.52

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTHL019N65S3H

GBP 7.46

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH029N65S3-F155

GBP 7.10

1

onsemi 2N6287G PNP Transistor, 20 A, 100 V dc, 3-Pin TO-204AA

onsemi 2N6287G PNP Transistor, 20 A, 100 V dc, 3-Pin TO-204AA, Maximum DC Collector Current: 20 (Continuous) A, 40 (Peak) A, Mounting Type: Through Hole, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.49

1

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA, Maximum DC Collector Current: 20 (Continuous) A, 40 (Peak) A, Mounting Type: Through Hole, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.06

1

onsemi MJ15004G PNP Transistor, 20 A, 140 V, 2-Pin TO-204AA

onsemi MJ15004G PNP Transistor, 20 A, 140 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 2 MHz, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.93

1

onsemi MJ15003G NPN Transistor, 20 A, 140 V, 2-Pin TO-204AA

onsemi MJ15003G NPN Transistor, 20 A, 140 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 2 MHz, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 6.40

1

onsemi MJL4302AG PNP Transistor, 15 A, 350 V, 3-Pin TO-3BPL

onsemi MJL4302AG PNP Transistor, 15 A, 350 V, 3-Pin TO-3BPL, Mounting Type: Through Hole, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 35 MHz, Dimensions: 26.4 x 20.3 x 5.3mm, Height: 26.4mm

GBP 4.99

1

onsemi MJL4281AG NPN Transistor, 15 A, 350 V, 3-Pin TO-3PBL

onsemi MJL4281AG NPN Transistor, 15 A, 350 V, 3-Pin TO-3PBL, Mounting Type: Through Hole, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 35 MHz, Dimensions: 26.4 x 20.3 x 5.3mm, Height: 26.4mm

GBP 4.95

1

onsemi N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247 NTH4LN019N65S3H

onsemi N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247 NTH4LN019N65S3H, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.0193 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

GBP 7.43

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTHL019N65S3H

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTHL019N65S3H, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.0193 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

GBP 5.48

1

onsemi N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247 NTH4LN019N65S3H

onsemi N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247 NTH4LN019N65S3H, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.0193 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

GBP 5.93

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTHL019N65S3H

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTHL019N65S3H, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.0193 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

GBP 8.68

1

onsemi MJW18020G NPN Transistor, 30 A, 450 V, 3-Pin TO-247

onsemi MJW18020G NPN Transistor, 30 A, 450 V, 3-Pin TO-247, Mounting Type: Through Hole, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 1000 V dc, Maximum Emitter Base Voltage: 9 V, Maximum Operating Frequency: 1 MHz, Dimensions: 16.26 x 5.3 x 21.08mm

GBP 4.86

1

Awardvindende Google Marketing Powerhouse

Brand

Gender

Merchant

Price (EUR)

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi AFGHL75T65SQDC IGBT, 75 A 650 V, 3-Pin TO-247

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi AFGHL75T65SQDC IGBT, 75 A 650 V, 3-Pin TO-247

onsemi AFGHL75T65SQDC IGBT, 75 A 650 V, 3-Pin TO-247

onsemi N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 NTHL065N65S3HF

onsemi N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247 NTH4LN019N65S3H

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL082N65S3HF

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTHL019N65S3H

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH029N65S3-F155

onsemi 2N6287G PNP Transistor, 20 A, 100 V dc, 3-Pin TO-204AA

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA

onsemi MJ15004G PNP Transistor, 20 A, 140 V, 2-Pin TO-204AA

onsemi MJ15003G NPN Transistor, 20 A, 140 V, 2-Pin TO-204AA

onsemi MJL4302AG PNP Transistor, 15 A, 350 V, 3-Pin TO-3BPL

onsemi MJL4281AG NPN Transistor, 15 A, 350 V, 3-Pin TO-3PBL

onsemi N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247 NTH4LN019N65S3H

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTHL019N65S3H

onsemi N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247 NTH4LN019N65S3H

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTHL019N65S3H

onsemi MJW18020G NPN Transistor, 30 A, 450 V, 3-Pin TO-247

Powered by Cobiro