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onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin DPAK NTD360N80S3Z

GBP 1.39

1

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220F NTPF360N80S3Z

GBP 1.64

1

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220 NTP360N80S3Z

GBP 1.69

1

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin DPAK NTD360N80S3Z

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin DPAK NTD360N80S3Z, Package Type: TO-252, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Series: SUPERFET III

GBP 1.19

1

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin DPAK NTD360N80S3Z

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin DPAK NTD360N80S3Z, Package Type: TO-252, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Series: SUPERFET III

GBP 1.64

1

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220F NTPF360N80S3Z

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220F NTPF360N80S3Z, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Series: SUPERFET III

GBP 1.91

1

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220 NTP360N80S3Z

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220 NTP360N80S3Z, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Series: SUPERFET III

GBP 1.71

1

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220 NTP360N80S3Z

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220 NTP360N80S3Z, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Series: SUPERFET III

GBP 2.00

1

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220F NTPF360N80S3Z

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220F NTPF360N80S3Z, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Series: SUPERFET III

GBP 1.40

1

onsemi N-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC FDS6670A

onsemi N-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC FDS6670A, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm

GBP 0.31

1

onsemi P-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC FDS6679AZ

onsemi P-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC FDS6679AZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 1.5mm

GBP 0.32

1

onsemi N-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC FDS6670A

onsemi N-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC FDS6670A, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm

GBP 0.62

1

onsemi P-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC FDS6679AZ

onsemi P-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC FDS6679AZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 1.5mm

GBP 0.68

1

onsemi P-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC FDS6679AZ

onsemi P-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC FDS6679AZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 1.5mm

GBP 0.38

1

onsemi N-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC FDS6670A

onsemi N-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC FDS6670A, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm

GBP 0.50

1

onsemi N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220 FCP13N60N

onsemi N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220 FCP13N60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 258 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 116 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.4mm, Length: 10.67mm

GBP 3.47

1

onsemi N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220 FCP13N60N

onsemi N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220 FCP13N60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 258 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 116 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.4mm, Length: 10.67mm

GBP 2.95

1

onsemi N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220F FCPF13N60NT

onsemi N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220F FCPF13N60NT, Mounting Type: Through Hole, Maximum Drain Source Resistance: 258 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 33.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15.9mm, Length: 10.16mm

GBP 2.16

1

onsemi N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220F FCPF13N60NT

onsemi N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220F FCPF13N60NT, Mounting Type: Through Hole, Maximum Drain Source Resistance: 258 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 33.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15.9mm, Length: 10.16mm

GBP 1.03

1

onsemi N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220F FCPF13N60NT

onsemi N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220F FCPF13N60NT, Mounting Type: Through Hole, Maximum Drain Source Resistance: 258 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 33.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15.9mm, Length: 10.16mm

GBP 1.01

1

onsemi N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220 FCP13N60N

onsemi N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220 FCP13N60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 258 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 116 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.4mm, Length: 10.67mm

GBP 3.37

1

onsemi MC33202DMR2G, Operational Amplifier, Op Amp, 2.2MHz 100 kHz, 13 V, 8-Pin Micro

onsemi MC33202DMR2G, Operational Amplifier, Op Amp, 2.2MHz 100 kHz, 13 V, 8-Pin Micro, Mounting Type: Surface Mount, Power Supply Type: Single, Output Type: Rail to Rail, Typical Slew Rate: 1V/µs, Maximum Operating Temperature: +105 °C, Minimum Operating Temperature: -40 °C, Automotive Standard: AEC-Q100, Dimensions: 3.1 x 3.1 x 0.95mm

GBP 0.50

1

onsemi MC33202DMR2G, Operational Amplifier, Op Amp, 2.2MHz 100 kHz, 13 V, 8-Pin Micro

onsemi MC33202DMR2G, Operational Amplifier, Op Amp, 2.2MHz 100 kHz, 13 V, 8-Pin Micro, Mounting Type: Surface Mount, Power Supply Type: Single, Output Type: Rail to Rail, Typical Slew Rate: 1V/µs, Maximum Operating Temperature: +105 °C, Minimum Operating Temperature: -40 °C, Automotive Standard: AEC-Q100, Dimensions: 3.1 x 3.1 x 0.95mm

GBP 0.78

1

onsemi MC33202DMR2G, Operational Amplifier, Op Amp, 2.2MHz 100 kHz, 13 V, 8-Pin Micro

onsemi MC33202DMR2G, Operational Amplifier, Op Amp, 2.2MHz 100 kHz, 13 V, 8-Pin Micro, Mounting Type: Surface Mount, Power Supply Type: Single, Output Type: Rail to Rail, Typical Slew Rate: 1V/µs, Maximum Operating Temperature: +105 °C, Minimum Operating Temperature: -40 °C, Automotive Standard: AEC-Q100, Dimensions: 3.1 x 3.1 x 0.95mm

GBP 0.38

1

onsemi CM1293A-04SO, 13-Element Uni-Directional ESD Protection Array, 0.22W, 6-Pin SC-74

onsemi CM1293A-04SO, 13-Element Uni-Directional ESD Protection Array, 0.22W, 6-Pin SC-74, Maximum Clamping Voltage: 9.9V, Mounting Type: Surface Mount, Maximum Reverse Stand-off Voltage: 5.5V, Maximum Peak Pulse Current: 1A, ESD Protection: Yes, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +85 °C, Capacitance: 2pF, Dimensions: 3.1 x 1.7 x 1mm

GBP 0.07

1

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onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin DPAK NTD360N80S3Z

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220F NTPF360N80S3Z

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220 NTP360N80S3Z

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin DPAK NTD360N80S3Z

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin DPAK NTD360N80S3Z

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220F NTPF360N80S3Z

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220 NTP360N80S3Z

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220 NTP360N80S3Z

onsemi N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin TO-220F NTPF360N80S3Z

onsemi N-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC FDS6670A

onsemi P-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC FDS6679AZ

onsemi N-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC FDS6670A

onsemi P-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC FDS6679AZ

onsemi P-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC FDS6679AZ

onsemi N-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC FDS6670A

onsemi N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220 FCP13N60N

onsemi N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220 FCP13N60N

onsemi N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220F FCPF13N60NT

onsemi N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220F FCPF13N60NT

onsemi N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220F FCPF13N60NT

onsemi N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220 FCP13N60N

onsemi MC33202DMR2G, Operational Amplifier, Op Amp, 2.2MHz 100 kHz, 13 V, 8-Pin Micro

onsemi MC33202DMR2G, Operational Amplifier, Op Amp, 2.2MHz 100 kHz, 13 V, 8-Pin Micro

onsemi MC33202DMR2G, Operational Amplifier, Op Amp, 2.2MHz 100 kHz, 13 V, 8-Pin Micro

onsemi CM1293A-04SO, 13-Element Uni-Directional ESD Protection Array, 0.22W, 6-Pin SC-74

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