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onsemi ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole

onsemi ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole, Maximum Gate Emitter Voltage: ±14V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Dimensions: 10.67 x 4.7 x 16.3mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 1.40

1

onsemi MAX1720EUTG Charge Pump, Regulator 100mA 0.3 V, 21 kHz 6-Pin, TSOP

onsemi MAX1720EUTG Charge Pump, Regulator 100mA 0.3 V, 21 kHz 6-Pin, TSOP, Mounting Type: Surface Mount, Dimensions: 3.1 x 1.7 x 1mm, Length: 3.1mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Minimum Output Voltage: -6 V, Width: 1.7mm

GBP 0.24

1

onsemi ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole

onsemi ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole, Maximum Gate Emitter Voltage: ±14V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Dimensions: 10.67 x 4.7 x 16.3mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 1.14

1

onsemi MAX1720EUTG Charge Pump, Regulator 100mA 0.3 V, 21 kHz 6-Pin, TSOP

onsemi MAX1720EUTG Charge Pump, Regulator 100mA 0.3 V, 21 kHz 6-Pin, TSOP, Mounting Type: Surface Mount, Dimensions: 3.1 x 1.7 x 1mm, Length: 3.1mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Minimum Output Voltage: -6 V, Width: 1.7mm

GBP 0.52

1

onsemi N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK NTMYS025N06CLTWGOS

onsemi N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK NTMYS025N06CLTWGOS, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 43 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 24 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.75

1

onsemi N-Channel MOSFET, 21 A, 60 V, 5-Pin DFN NVMFS5C680NLT1G

onsemi N-Channel MOSFET, 21 A, 60 V, 5-Pin DFN NVMFS5C680NLT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 27.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 24 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.47

1

onsemi N-Channel MOSFET, 21 A, 60 V, 5-Pin DFN NVMFS5C680NLT1G

onsemi N-Channel MOSFET, 21 A, 60 V, 5-Pin DFN NVMFS5C680NLT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 27.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 24 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.23

1

onsemi N-Channel MOSFET, 21 A, 60 V, 5-Pin DFN NVMFS5C680NLT1G

onsemi N-Channel MOSFET, 21 A, 60 V, 5-Pin DFN NVMFS5C680NLT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 27.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 24 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.33

1

onsemi ISL9V3040S3ST IGBT, 21 A 450 V, 3-Pin D2PAK (TO-263), Surface Mount

onsemi ISL9V3040S3ST IGBT, 21 A 450 V, 3-Pin D2PAK (TO-263), Surface Mount, Maximum Gate Emitter Voltage: ±14V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Dimensions: 10.67 x 9.65 x 4.83mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 1.68

1

onsemi ISL9V3040S3ST IGBT, 21 A 450 V, 3-Pin D2PAK (TO-263), Surface Mount

onsemi ISL9V3040S3ST IGBT, 21 A 450 V, 3-Pin D2PAK (TO-263), Surface Mount, Maximum Gate Emitter Voltage: ±14V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Dimensions: 10.67 x 9.65 x 4.83mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 1.00

1

onsemi FGB3040CS IGBT, 21 A 430 V, 6-Pin D2PAK (TO-263), Surface Mount

onsemi FGB3040CS IGBT, 21 A 430 V, 6-Pin D2PAK (TO-263), Surface Mount, Maximum Gate Emitter Voltage: ±10V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Dimensions: 10.1 x 9.4 x 4.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 1.86

1

onsemi N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK NVMYS025N06CLTWGOS

onsemi N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK NVMYS025N06CLTWGOS, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 43 mO, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 24 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.63

1

onsemi N-Channel MOSFET, 21 A, 80 V, 5-Pin DFN NVMFS6H864NT1G

onsemi N-Channel MOSFET, 21 A, 80 V, 5-Pin DFN NVMFS6H864NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 32 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.21

1

onsemi N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK NVMYS025N06CLTWGOS

onsemi N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK NVMYS025N06CLTWGOS, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 43 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 24 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.65

1

onsemi N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK NVMYS025N06CLTWGOS

onsemi N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK NVMYS025N06CLTWGOS, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 43 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 24 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.50

1

onsemi N-Channel MOSFET, 21 A, 80 V, 5-Pin DFN NVMFS6H864NT1G

onsemi N-Channel MOSFET, 21 A, 80 V, 5-Pin DFN NVMFS6H864NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 32 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.21

1

onsemi N-Channel MOSFET, 21 A, 80 V, 5-Pin DFN NVMFS6H864NT1G

onsemi N-Channel MOSFET, 21 A, 80 V, 5-Pin DFN NVMFS6H864NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 32 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.64

1

onsemi ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole

onsemi ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole, Maximum Gate Emitter Voltage: ±14V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Length: 10.67mm, Width: 4.7mm, Height: 16.3mm, Dimensions: 10.67 x 4.7 x 16.3mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 1.13

1

onsemi N-Channel MOSFET, 21 A, 30 V, 3-Pin DPAK FDD6630A

onsemi N-Channel MOSFET, 21 A, 30 V, 3-Pin DPAK FDD6630A, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 28 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 0.20

1

onsemi N-Channel MOSFET, 21 A, 150 V, 3-Pin DPAK FDD2582

onsemi N-Channel MOSFET, 21 A, 150 V, 3-Pin DPAK FDD2582, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 172 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 95 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 0.53

1

onsemi N-Channel MOSFET, 21 A, 30 V, 3-Pin DPAK FDD6630A

onsemi N-Channel MOSFET, 21 A, 30 V, 3-Pin DPAK FDD6630A, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 28 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 0.61

1

onsemi N-Channel MOSFET, 21 A, 150 V, 3-Pin DPAK FDD2582

onsemi N-Channel MOSFET, 21 A, 150 V, 3-Pin DPAK FDD2582, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 172 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 95 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 1.25

1

onsemi N-Channel MOSFET, 21 A, 150 V, 3-Pin DPAK FDD2582

onsemi N-Channel MOSFET, 21 A, 150 V, 3-Pin DPAK FDD2582, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 172 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 95 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 1.06

1

onsemi N-Channel MOSFET, 21 A, 30 V, 3-Pin DPAK FDD6630A

onsemi N-Channel MOSFET, 21 A, 30 V, 3-Pin DPAK FDD6630A, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 28 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 0.51

1

onsemi N-Channel MOSFET, 21 A, 300 V, 3-Pin TO-220AB FQP22N30

onsemi N-Channel MOSFET, 21 A, 300 V, 3-Pin TO-220AB FQP22N30, Mounting Type: Through Hole, Maximum Drain Source Resistance: 160 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.4mm, Length: 10.1mm

GBP 2.09

1

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onsemi ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole

onsemi MAX1720EUTG Charge Pump, Regulator 100mA 0.3 V, 21 kHz 6-Pin, TSOP

onsemi ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole

onsemi MAX1720EUTG Charge Pump, Regulator 100mA 0.3 V, 21 kHz 6-Pin, TSOP

onsemi N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK NTMYS025N06CLTWGOS

onsemi N-Channel MOSFET, 21 A, 60 V, 5-Pin DFN NVMFS5C680NLT1G

onsemi N-Channel MOSFET, 21 A, 60 V, 5-Pin DFN NVMFS5C680NLT1G

onsemi N-Channel MOSFET, 21 A, 60 V, 5-Pin DFN NVMFS5C680NLT1G

onsemi ISL9V3040S3ST IGBT, 21 A 450 V, 3-Pin D2PAK (TO-263), Surface Mount

onsemi ISL9V3040S3ST IGBT, 21 A 450 V, 3-Pin D2PAK (TO-263), Surface Mount

onsemi FGB3040CS IGBT, 21 A 430 V, 6-Pin D2PAK (TO-263), Surface Mount

onsemi N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK NVMYS025N06CLTWGOS

onsemi N-Channel MOSFET, 21 A, 80 V, 5-Pin DFN NVMFS6H864NT1G

onsemi N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK NVMYS025N06CLTWGOS

onsemi N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK NVMYS025N06CLTWGOS

onsemi N-Channel MOSFET, 21 A, 80 V, 5-Pin DFN NVMFS6H864NT1G

onsemi N-Channel MOSFET, 21 A, 80 V, 5-Pin DFN NVMFS6H864NT1G

onsemi ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole

onsemi N-Channel MOSFET, 21 A, 30 V, 3-Pin DPAK FDD6630A

onsemi N-Channel MOSFET, 21 A, 150 V, 3-Pin DPAK FDD2582

onsemi N-Channel MOSFET, 21 A, 30 V, 3-Pin DPAK FDD6630A

onsemi N-Channel MOSFET, 21 A, 150 V, 3-Pin DPAK FDD2582

onsemi N-Channel MOSFET, 21 A, 150 V, 3-Pin DPAK FDD2582

onsemi N-Channel MOSFET, 21 A, 30 V, 3-Pin DPAK FDD6630A

onsemi N-Channel MOSFET, 21 A, 300 V, 3-Pin TO-220AB FQP22N30

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