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onsemi Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 NTZD3154NT1G

onsemi Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 NTZD3154NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.45V, Maximum Power Dissipation: 250 mW, Maximum Gate Source Voltage: ±7 V, Forward Diode Voltage: 1.2V, Height: 0.6mm

GBP 0.11

1

onsemi Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 NTZD3154NT1G

onsemi Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 NTZD3154NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.45V, Maximum Power Dissipation: 250 mW, Maximum Gate Source Voltage: ±7 V, Forward Diode Voltage: 1.2V, Height: 0.6mm

GBP 0.07

1

onsemi Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 NTZD3154NT1G

onsemi Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 NTZD3154NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.45V, Maximum Power Dissipation: 250 mW, Maximum Gate Source Voltage: ±7 V, Forward Diode Voltage: 1.2V, Height: 0.6mm

GBP 0.15

1

onsemi NSS12201LT1G NPN Digital Transistor, 12 V dc, 3-Pin SOT-23

onsemi NSS12201LT1G NPN Digital Transistor, 12 V dc, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 6 V dc, Dimensions: 3.04 x 1.4 x 1.01mm, Minimum Operating Temperature: -55 °C

GBP 0.28

1

onsemi NSS12201LT1G NPN Digital Transistor, 12 V dc, 3-Pin SOT-23

onsemi NSS12201LT1G NPN Digital Transistor, 12 V dc, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 6 V dc, Dimensions: 3.04 x 1.4 x 1.01mm, Minimum Operating Temperature: -55 °C

GBP 0.09

1

onsemi NSS40200LT1G PNP Digital Transistor, -40 V dc, 3-Pin SOT-23

onsemi NSS40200LT1G PNP Digital Transistor, -40 V dc, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: -7 V dc, Dimensions: 3.04 x 1.4 x 1.01mm, Minimum Operating Temperature: -55 °C, Automotive Standard: AEC-Q101

GBP 0.28

1

onsemi NSS40200LT1G PNP Digital Transistor, -40 V dc, 3-Pin SOT-23

onsemi NSS40200LT1G PNP Digital Transistor, -40 V dc, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: -7 V dc, Dimensions: 3.04 x 1.4 x 1.01mm, Minimum Operating Temperature: -55 °C, Automotive Standard: AEC-Q101

GBP 0.08

1

onsemi N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220F FDPF13N50FT

onsemi N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220F FDPF13N50FT, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 42 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.07mm, Length: 10.36mm

GBP 1.56

1

onsemi N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220F FDPF13N50FT

onsemi N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220F FDPF13N50FT, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 42 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.07mm, Length: 10.36mm

GBP 1.41

1

onsemi N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220F FDPF13N50FT

onsemi N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220F FDPF13N50FT, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 42 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.07mm, Length: 10.36mm

GBP 1.44

1

onsemi NSS60200LG PNP Transistor, 2 A, 60 V, 3-Pin SOT-23

onsemi NSS60200LG PNP Transistor, 2 A, 60 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 540 mW, Minimum DC Current Gain: 100, Transistor Configuration: Single, Maximum Collector Base Voltage: -80 V, Maximum Emitter Base Voltage: -7 V, Maximum Operating Frequency: 100 MHz, Dimensions: 3.04 x 1.4 x 1.01mm, MPN: NSS60200LT1G

GBP 0.15

1

onsemi NSS12201LT1G NPN Digital Transistor, 12 V dc, 3-Pin SOT-23

onsemi NSS12201LT1G NPN Digital Transistor, 12 V dc, 3-Pin SOT-23, Maximum Continuous Collector Current: 2 A, Mounting Type: Surface Mount, Minimum DC Current Gain: 200, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 0.09 V, Maximum Emitter Base Voltage: 6 V dc, Dimensions: 3.04 x 1.4 x 1.01mm

GBP 0.16

1

onsemi 30C02CH-TL-E NPN Transistor, 700 mA, 30 V, 3-Pin CPH

onsemi 30C02CH-TL-E NPN Transistor, 700 mA, 30 V, 3-Pin CPH, Mounting Type: Surface Mount, Maximum Power Dissipation: 700 mW, Minimum DC Current Gain: 300, Transistor Configuration: Single, Maximum Collector Base Voltage: 40 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 540 MHz, Number of Elements per Chip: 1, Dimensions: 2.9 x 1.6 x 0.9mm

GBP 0.20

1

onsemi NSS40200LT1G PNP Digital Transistor, -40 V dc, 3-Pin SOT-23

onsemi NSS40200LT1G PNP Digital Transistor, -40 V dc, 3-Pin SOT-23, Maximum Continuous Collector Current: -2 A, Mounting Type: Surface Mount, Minimum DC Current Gain: 150, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: -0.17 V, Maximum Emitter Base Voltage: -7 V dc, Automotive Standard: AEC-Q101, Dimensions: 3.04 x 1.4 x 1.01mm

GBP 0.13

1

onsemi NSS60200LG PNP Transistor, 2 A, 60 V, 3-Pin SOT-23

onsemi NSS60200LG PNP Transistor, 2 A, 60 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: -80 V, Maximum Emitter Base Voltage: -7 V, Maximum Operating Frequency: 100 MHz, Dimensions: 3.04 x 1.4 x 1.01mm, Maximum Base Emitter Saturation Voltage: -0.9 V, Maximum Collector Emitter Saturation Voltage: -0.03 V, MPN: NSS60200LT1G

GBP 0.28

1

onsemi NSS60200LG PNP Transistor, 2 A, 60 V, 3-Pin SOT-23

onsemi NSS60200LG PNP Transistor, 2 A, 60 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 540 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: -80 V, Maximum Emitter Base Voltage: -7 V, Maximum Operating Frequency: 100 MHz, Dimensions: 3.04 x 1.4 x 1.01mm, Maximum Base Emitter Saturation Voltage: -0.9 V, Maximum Collector Emitter Saturation Voltage: -0.03 V, MPN: NSS60200LT1G

GBP 0.12

1

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onsemi Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 NTZD3154NT1G

onsemi Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 NTZD3154NT1G

onsemi Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 NTZD3154NT1G

onsemi NSS12201LT1G NPN Digital Transistor, 12 V dc, 3-Pin SOT-23

onsemi NSS12201LT1G NPN Digital Transistor, 12 V dc, 3-Pin SOT-23

onsemi NSS40200LT1G PNP Digital Transistor, -40 V dc, 3-Pin SOT-23

onsemi NSS40200LT1G PNP Digital Transistor, -40 V dc, 3-Pin SOT-23

onsemi N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220F FDPF13N50FT

onsemi N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220F FDPF13N50FT

onsemi N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220F FDPF13N50FT

onsemi NSS60200LG PNP Transistor, 2 A, 60 V, 3-Pin SOT-23

onsemi NSS12201LT1G NPN Digital Transistor, 12 V dc, 3-Pin SOT-23

onsemi 30C02CH-TL-E NPN Transistor, 700 mA, 30 V, 3-Pin CPH

onsemi NSS40200LT1G PNP Digital Transistor, -40 V dc, 3-Pin SOT-23

onsemi NSS60200LG PNP Transistor, 2 A, 60 V, 3-Pin SOT-23

onsemi NSS60200LG PNP Transistor, 2 A, 60 V, 3-Pin SOT-23

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