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onsemi AFGHL50T65SQD IGBT, 80 A 650 V, 3-Pin TO-247

GBP 3.07

1

onsemi AFGHL50T65SQ IGBT, 50 A 650 V, 3-Pin TO-247

GBP 2.42

1

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247

GBP 7.07

1

onsemi FGHL50T65SQDT IGBT, 100 A 650 V, 3-Pin TO-247

GBP 2.91

1

onsemi AFGHL40T65SQ IGBT, 80 A 650 V, 3-Pin TO-247

GBP 2.24

1

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

GBP 6.09

1

onsemi AFGHL75T65SQ IGBT, 75 A 650 V, 3-Pin TO-247

GBP 2.99

1

onsemi AFGHL75T65SQDC IGBT, 75 A 650 V, 3-Pin TO-247

GBP 4.88

1

onsemi N-Channel MOSFET, 100 A, 277 A, 40 V, 3-Pin TO-220 FDP8440

onsemi N-Channel MOSFET, 100 A, 277 A, 40 V, 3-Pin TO-220 FDP8440, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.4 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 306 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16.51mm, Length: 10.67mm

GBP 1.31

1

onsemi N-Channel MOSFET, 120 A, 193 A, 60 V, 3-Pin TO-220 FDP030N06

onsemi N-Channel MOSFET, 120 A, 193 A, 60 V, 3-Pin TO-220 FDP030N06, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 231 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.38mm, Length: 10.1mm

GBP 3.09

1

onsemi N-Channel MOSFET, 100 A, 277 A, 40 V, 3-Pin TO-220 FDP8440

onsemi N-Channel MOSFET, 100 A, 277 A, 40 V, 3-Pin TO-220 FDP8440, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.4 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 306 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16.51mm, Length: 10.67mm

GBP 2.83

1

onsemi N-Channel MOSFET, 120 A, 193 A, 60 V, 3-Pin TO-220 FDP030N06

onsemi N-Channel MOSFET, 120 A, 193 A, 60 V, 3-Pin TO-220 FDP030N06, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 231 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.38mm, Length: 10.1mm

GBP 3.09

1

onsemi N-Channel MOSFET, 120 A, 193 A, 60 V, 3-Pin TO-220 FDP030N06

onsemi N-Channel MOSFET, 120 A, 193 A, 60 V, 3-Pin TO-220 FDP030N06, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 231 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.38mm, Length: 10.1mm

GBP 2.63

1

onsemi N-Channel MOSFET, 100 A, 277 A, 40 V, 3-Pin TO-220 FDP8440

onsemi N-Channel MOSFET, 100 A, 277 A, 40 V, 3-Pin TO-220 FDP8440, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.4 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 306 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16.51mm, Length: 10.67mm

GBP 1.28

1

onsemi AFGHL50T65SQ IGBT, 50 A 650 V, 3-Pin TO-247

onsemi AFGHL50T65SQ IGBT, 50 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±30.0V, Maximum Power Dissipation: 268 W, Transistor Configuration: Single

GBP 2.63

1

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 660 W, Transistor Configuration: Single

GBP 6.09

1

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 714 W, Transistor Configuration: Single

GBP 8.21

1

onsemi AFGHL50T65SQ IGBT, 50 A 650 V, 3-Pin TO-247

onsemi AFGHL50T65SQ IGBT, 50 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±30.0V, Maximum Power Dissipation: 268 W, Transistor Configuration: Single

GBP 2.78

1

onsemi AFGHL40T65SQD IGBT, 80 A 650 V, 3-Pin TO-247

onsemi AFGHL40T65SQD IGBT, 80 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±30.0V, Maximum Power Dissipation: 238 W, Transistor Configuration: Single

GBP 3.62

1

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 714 W, Transistor Configuration: Single

GBP 6.80

1

onsemi AFGHL40T65SQ IGBT, 80 A 650 V, 3-Pin TO-247

onsemi AFGHL40T65SQ IGBT, 80 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±30.0V, Maximum Power Dissipation: 1 W, Transistor Configuration: Single

GBP 2.58

1

onsemi AFGHL50T65SQD IGBT, 80 A 650 V, 3-Pin TO-247

onsemi AFGHL50T65SQD IGBT, 80 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±30.0V, Maximum Power Dissipation: 268 W, Transistor Configuration: Single

GBP 3.34

1

onsemi AFGHL50T65SQD IGBT, 80 A 650 V, 3-Pin TO-247

onsemi AFGHL50T65SQD IGBT, 80 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±30.0V, Maximum Power Dissipation: 268 W, Transistor Configuration: Single

GBP 3.53

1

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 660 W, Transistor Configuration: Single

GBP 7.07

1

onsemi FGHL50T65SQDT IGBT, 100 A 650 V, 3-Pin TO-247

onsemi FGHL50T65SQDT IGBT, 100 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±30.0V, Maximum Power Dissipation: 134 W, Transistor Configuration: Single

GBP 3.37

1

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onsemi AFGHL50T65SQD IGBT, 80 A 650 V, 3-Pin TO-247

onsemi AFGHL50T65SQ IGBT, 50 A 650 V, 3-Pin TO-247

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247

onsemi FGHL50T65SQDT IGBT, 100 A 650 V, 3-Pin TO-247

onsemi AFGHL40T65SQ IGBT, 80 A 650 V, 3-Pin TO-247

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi AFGHL75T65SQ IGBT, 75 A 650 V, 3-Pin TO-247

onsemi AFGHL75T65SQDC IGBT, 75 A 650 V, 3-Pin TO-247

onsemi N-Channel MOSFET, 100 A, 277 A, 40 V, 3-Pin TO-220 FDP8440

onsemi N-Channel MOSFET, 120 A, 193 A, 60 V, 3-Pin TO-220 FDP030N06

onsemi N-Channel MOSFET, 100 A, 277 A, 40 V, 3-Pin TO-220 FDP8440

onsemi N-Channel MOSFET, 120 A, 193 A, 60 V, 3-Pin TO-220 FDP030N06

onsemi N-Channel MOSFET, 120 A, 193 A, 60 V, 3-Pin TO-220 FDP030N06

onsemi N-Channel MOSFET, 100 A, 277 A, 40 V, 3-Pin TO-220 FDP8440

onsemi AFGHL50T65SQ IGBT, 50 A 650 V, 3-Pin TO-247

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247

onsemi AFGHL50T65SQ IGBT, 50 A 650 V, 3-Pin TO-247

onsemi AFGHL40T65SQD IGBT, 80 A 650 V, 3-Pin TO-247

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247

onsemi AFGHL40T65SQ IGBT, 80 A 650 V, 3-Pin TO-247

onsemi AFGHL50T65SQD IGBT, 80 A 650 V, 3-Pin TO-247

onsemi AFGHL50T65SQD IGBT, 80 A 650 V, 3-Pin TO-247

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi FGHL50T65SQDT IGBT, 100 A 650 V, 3-Pin TO-247

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