Infineon N-Channel MOSFET, 130 A, 60 V, 6 + Tab-Pin ME IRF60DM206
Infineon N-Channel MOSFET, 130 A, 60 V, 6 + Tab-Pin ME IRF60DM206, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 96 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 0.53mm